Development of an afterpulse effect model of InGaAs/InP single-photon avalanche diodes for application in quantum key distribution systems

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Development of an afterpulse effect model of InGaAs/InP single-photon avalanche diodes for application in quantum key distribution systems

Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 2024. Vol. 90. No. 12. P. 737–742.

Alexandr Filyaev, Losev A., Vladimir Zavodilenko, Pavlov I.

Subject of study. A noise parameter, such as an afterpulse effect, that occurs in indium-gallium arsenide/indium phosphide single-photon avalanche diodes when operated as part of a single-photon detector in quantum key distribution systems was investigated. The aim of this study was the analysis of indium-gallium arsenide/indium phosphide single-photon avalanche diode afterpulse effect estimation approaches for real-world quantum key distribution systems and the development of a measurement technique and model for estimating the afterpulse effect in indium-gallium arsenide/indium phosphide single-photon avalanche diodes. Method. For the experimental measurement of the afterpulse probability in indium-gallium arsenide/indium phosphide single-photon avalanche diodes, a special stand was used. All components of this stand are controlled by LabVIEW software. The developed model of afterpulse probability is based on the non-Markovian character of this effect. Main results. A measurement technique and probabilistic model were developed to estimate the afterpulse based on the recursive nature of this effect in indium-gallium arsenide/indium phosphide single-photon avalanche diodes. This makes it possible to estimate the true value of the afterpulse probability by reaction with a single triggering of a single-photon detector composed of indium-gallium arsenide/indium phosphide single-photon avalanche diodes. Analysis of approaches to estimating the afterpulse used in real-world quantum key distribution systems was performed. The advantages of the developed approach over the standard methods that do not take into account the non-Markov nature of the effect under consideration are demonstrated. Practical significance. The proposed approach was developed in the form of two models (simple and complex), which allows a compromise between the accuracy of calculations and their complexity for the application of such devices in quantum key distribution systems.

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