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Быстродействующие фотодетекторы на основе квантовых ям-точек InGaAs/GaAs
Письма в Журнал технической физики. 2022. Т. 48. № 4. С. 32–35.
Минтаиров С. А., С.А. Блохин, Калюжный Н. А., М.В. Максимов, Малеев Н. А., А.М. Надточий, Салий Р. А., Н.В. Крыжановская, А.Е. Жуков
High-speed photodetectors based on InGaAs/GaAs quantum well–dot nanostructures have been investigated. A bandwidth of 8.2 GHz at a level of ‒3 dB and a wavelength of 905 nm has been demonstrated. It is shown that the speed of internal processes in quantum well–dots make it possible to create photodetectors with a bandwidth of up to 12.5 GHz and the processes of carrier thermalization from the quantum-well dot layers do not limit the speed under reverse biases of more than 5 V.
Gurina D., Fashchevsky K. A., Oparin R. D. et al., Surfaces and Interfaces 2026 Vol. 98 Article 110545
In this work, we combine experimental characterization and molecular dynamics (MD) simulations to elucidate the molecular mechanisms governing the impregnation of mefenamic acid (MFA) into nanocrystalline cellulose (NCC) aerogels. NCC aerogels were impregnated with MFA in scCO2, and low-temperature nitrogen adsorption revealed a concentration-dependent decrease in surface area, pore volume, and pore size, with an ...
Added: September 8, 2026
Huang D., Chen Y., Luo X. et al., Chinese Journal of Physics 2026 Vol. 103 P. 1803–1814
Using self-consistent Bogoliubov-de Gennes calculations for kagome flakes framed by armchair
and flat edges, we observe a configuration-dependent spatial inhomogeneity of an 𝑠-wave superconducting
condensate. Specifically, at half-filling, the local pair potential is significantly enhanced
by up to 77.8% at edge centers and up to 148.9% at corners, subsequently boosting their
local critical temperatures by up to 13.5% and ...
Added: September 7, 2026
Marychev P., Shanenko A., Physical Review B: Condensed Matter and Materials Physics 2026 Vol. 114 No. 7 Article 074509
We investigate the effect of weak interband impurity scattering on the intertype (IT) domain between type-I and type-II superconductivity in diffusive two-band superconductors. Our results show that the significant broadening of the IT domain with increasing band diffusivity ratio, previously established in the absence of interband scattering, persists under weak interband scattering. However, depending on ...
Added: September 7, 2026
Denis K., Н. Новгород: Нижегородский государственный университет им. Н.И. Лобачевского, 2025.
В учебном пособии излагаются элементы теории и описание избранных экспериментальных результатов, полученных в активно развивающейся физике топологических изоляторов. Рассмотрены наиболее простые модели поверхностных и краевых состояний в двумерных и трёхмерных топологических изоляторах, их структура в магнитном поле, а также основы топологических методов для определения их свойств. Обсуждаются модели квантовых точек, формируемых в топологических изоляторах. Приведены ...
Added: September 6, 2026
Denis K., Звонков Б. Н., Вихрова О. В. et al., Физика твердого тела 2021 Т. 63 № 9 С. 1245–1252
Сочетанием методов МОС-гидридной эпитаксии и импульсного лазерного нанесения изготовлены гетеронаноструктуры InGaAs/GaAs со слоем (Ga, Mn)As на поверхности, и исследовано влияние воздействия импульсного эксимерного лазера (длина волны 248 nm, длительность импульса ~30 ns, плотность энергии в диапазоне 200-360 mJ/cm2) на их излучательные, структурные и гальваномагнитные свойства. При исследованиях использовалась спектроскопия фотолюминесценции, дополненная возможностью анализа поляризационных характеристик ...
Added: September 6, 2026
Воздействие импульсов эксимерного лазера на светоизлучающие InGaAs/GaAs-структуры с (Ga, Mn)As-слоем
Denis K., Вихрова О. В., Данилов Ю. А. et al., Физика твердого тела 2021 Т. 63 № 3 С. 346–355
Исследована возможность модифицирования лазерным отжигом свойств слоя (Ga, Mn)As, расположенного на поверхности квантово-размерной InGaAs/GaAs-структуры, с сохранением ее излучательных свойств. Для проведения исследований сочетанием методов МОС-гидридной эпитаксии и импульсного лазерного нанесения были изготовлены структуры с четырьмя квантовыми ямами InGaAs/GaAs, (содержание индия от 0.08 до 0.25), расположенными на различном расстоянии от слоя (Ga, Mn)As. В процессе исследований ...
Added: September 6, 2026
Denis K., Lavrukhina E. A., Journal of Physics: Conference Series 2021 Vol. 2103 Article 012201
A model of quasistationary states is constructed for the one-dimensional edge states propagating along the edge of a two-dimensional topological insulator based on HgTe/CdTe quantum well in the presence of magnetic barriers with finite transparency. The lifetimes of these quasistationary states are found analytically and numerically via different approaches including the solution of the stationary ...
Added: September 6, 2026
Denis K., Dorokhin M. V., Ved M. V. et al., Physical Review B: Condensed Matter and Materials Physics 2021 Vol. 104 No. 12 Article 125309
The GaAs/InGaAs quantum wells with a ferromagnetic δ〈Mn〉 layer in GaAs barrier demonstrate a set of interesting spin-related phenomena originating from Mn-hole interaction. One of such phenomena is a spin-memory effect which consists of Mn spin polarization induced by interaction with vicinity spin-polarized holes generated under the exposure by short circularly polarized light pulses. Here long Mn ...
Added: September 6, 2026
Denis K., Запруднов Н. А., Физика и техника полупроводников 2022 Т. 56 № 10 С. 973–978
Исследована динамика туннелирования и спина для дырочных состояний в двойной квантовой точке на основе GaAs при наличии сильного спин-орбитального взаимодействия и периодического электрического поля. Рассмотрены режимы туннелирования с переворотом спина в условиях "медленной" эволюции, при которой частота поля меньше остальных энергетических параметров стационарной части гамильтониана. Обнаружено, что в таких условиях туннелирование с переворотом спина может ...
Added: September 6, 2026
Denis K., Kalentyeva I. L., Vikhrova O. V. et al., Journal of Magnetism and Magnetic Materials 2022 Vol. 556 Article 169360
We have investigated the layers of the (Ga,Mn)As diluted magnetic semiconductor with the thickness in the range of 150 – 400 nm, which have been formed by the combination of the methods of a pulsed laser deposition and a post-growth pulsed laser annealing. It has been found that the laser annealing has a significant effect on the structural, ...
Added: September 6, 2026
Denis K., Konakov A. A., Lavrukhina E. A., Journal of Physics: Condensed Matter 2022 Vol. 34 Article 405302
A model of bound state formation from the delocalized edge states of 2D topological insulator (TI) is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a spatial form of 1D quantum dot (QD) with variable number of bound states depending on barrier ...
Added: September 6, 2026
Denis K., Studenikin S. A., Physical Review B: Condensed Matter and Materials Physics 2022 Vol. 106 No. 19 Article 195414
Single-spin state evolution induced by the Landau-Zener-Stückelberg-Majorana (LZSM) interference in a Zeeman-spit four-level system in a periodically driven double quantum dot is studied theoretically by the Floquet stroboscopic method. An interplay between spin-conserving and spin-flip tunneling processes with the electric dipole spin resonance (EDSR) that is induced in an individual dot and enhanced by the ...
Added: September 6, 2026
Denis K., Лаврухина Е. А., Тележников А. В., Физика и техника полупроводников 2023 Т. 57 № 7 С. 551–554
Разработана модель локализованных состояний в двойной квантовой точке на крае топологического изолятора на основе квантовой ямы HgTe/CdTe, сформированной тремя магнитными барьерами. Исследованы особенности энергетического спектра, плотности вероятности и спиновой плотности квантовых состояний в зависимости от ориентации векторов намагниченности магнитных барьеров. Изучена локализация волновых функций слева и справа от точки антикроссинга в спектре и сделан вывод ...
Added: September 6, 2026
-, 2025.
12-th International School and Conference “Saint Petersburg OPEN
2025” on Optoelectronics, Photonics, Engineering and Nanostructures
carries on the tradition of annual conferences and schools organized at
St Petersburg Academic University for students, PhD students and young
scientists. More detailed information on the School and Conference is
presented on https://spb.hse.ru/spbopen/
The Book of Abstracts includes abstracts of contributed works accepted
for presentation at ...
Added: October 29, 2025
Solodovnik M., Balakirev S., Ivan S. Makhov et al., Applied Surface Science 2025 Vol. 700 Article 163211
Despite the rapid growth in the number of studies devoted to quantum dot (QD) formation on patterned substrates,
segregation effects that have a significant impact on the properties of QD-based heterostructures remain
largely unexplored. In this paper, we focus on the influence of segregation under different capping regimes on the
optical properties of various InAs/GaAs nanostructures: QDs and ...
Added: April 17, 2025
Roghani H., Borhani E., Jafarian H. R. et al., Wear 2023 Vol. 526-527 Article 204895
In this research, AA1050/AA2024 layered composites were created through six cycles of the ARB process. In this direction, the effect of using the reinforcing nanoparticles and the initial aging process on the mechanical properties and microstructure were researched. Two sheets of AA1050 and one sheet of AA2024 alternatively were used to create the composite. Also, ...
Added: February 18, 2025
Arbenin A. Y., Petrov A. A., Nazarov D. V. et al., Procedia Structural Integrity 2023 Vol. 50 P. 27–32
The presented work is devoted to the study of the possibility of using planar materials consisting of ultramicroelectrode arrays for voltammetric analysis of compounds with close redox potential, but with different diffusion coefficients, which has great prospects in the analysis of various oligomers, including oligopeptides. A feature of the electrochemical behavior of materials containing arrays ...
Added: January 30, 2025
Mitin D. M., Pavlov A., Fedorov F. S. et al., Sensors and Actuators, B: Chemical 2024 Vol. 417 Article 136095
We report the approach to designing the hybrid gas sensor based on the array of vertically-oriented InAs nanowires and gas-permeable film made of single-walled carbon nanotubes (SWCNTs). We probe the sensor performance at room temperature towards isopropyl alcohol analyte, whose highest occupied molecular orbital energy to be in-between the Fermi levels of SWCNTs and InAs, to check the main contributing mechanism. Our theoretical analysis revealed ...
Added: January 30, 2025
Tang J., Xia Z., Bin Q. et al., Optica 2024 Vol. 11 No. 8 P. 1103–1112
In the exploration of collective dynamics and advanced information processing, synchronization and frequency locking
of mechanical oscillations are cornerstone phenomena. Traditional synchronization techniques, which typically involve
a single mechanical mode, are limited by their inability to distinguish between intrinsic mechanical oscillations and
external signals after locking. Addressing this challenge, we introduce a parametric approach that enables simultaneous frequency ...
Added: November 8, 2024
Мельниченко И. А., Komarov S., Dragunova A. et al., Письма в Журнал технической физики 2024 Т. 50 № 5 С. 3–6
С помощью конфокальной оптической микроскопии и спектроскопии микрофотолюминесценции исследованы субмикронные нановключения InAsxP1-x/InP, сформированные методом селективного эпитаксиального роста в кремнии с использованием металлоорганической газофазной эпитаксии и расплавленной капли элемента III группы. Исследовано влияние расстояния между нановключениями на интенсивность фотолюминесценции, получены температурные зависимости фотолюминесценции в диапазоне 77-290 K. При комнатной температуре получено излучение в спектральном диапазоне 1.2 ...
Added: February 13, 2024
Polynskaya Y., Sinitsa A., Vyrko S. et al., Physica E: Low-Dimensional Systems and Nanostructures 2023 Vol. 148 P. 1–7
Possible mechanism of cap expansion of preliminarily prepared carbon nanotube is proposed and confirmed by DFT calculations. According to this mechanism single carbon atoms adsorbed on lateral surface of the nanotube (sp atoms) migrate along the nanotube and are trapped at its cap in the potential well. When pair of sp atoms meet at the ...
Added: August 23, 2023
Kryzhanovskaya N., Blokhin S., Makhov I. et al., Физика и техника полупроводников 2023 Т. 57 № 3 С. 202–206
The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 µm and a length of the absorbing region ...
Added: June 27, 2023
Melnichenko I., Kryzhanovskaya N., Berdnikov Y. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 260–264
We present a photoluminescence study of InP nanostructures monolithically integrated to Si (100) substrate. The InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach by metal–organic vapor phase epitaxy via selective area growth driven by molten alloy. The obtained InP/Si nanostructures have submicron size above and below substrate surface. ...
Added: March 14, 2023
Springer, 2022.
The 9th International Symposium “Optics and its Applications” was held in Yerevan & Ashtarak, Armenia from January 15 to 19, 2022. This Symposium was dedicated to the Academician of the National Academy of Sciences (NAS) of
Armenia, Prof. Eduard Kazaryan, on the occasion of his 80th birthday. Therefore, it is not accidental that many of the ...
Added: November 7, 2022