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Быстродействующие фотодетекторы на основе квантовых ям-точек InGaAs/GaAs
Письма в Журнал технической физики. 2022. Т. 48. № 4. С. 32-35.
Минтаиров С. А., С.А. Блохин, Калюжный Н. А., М.В. Максимов, Малеев Н. А., А.М. Надточий, Салий Р. А., Н.В. Крыжановская, А.Е. Жуков
High-speed photodetectors based on InGaAs/GaAs quantum well–dot nanostructures have been investigated. A bandwidth of 8.2 GHz at a level of ‒3 dB and a wavelength of 905 nm has been demonstrated. It is shown that the speed of internal processes in quantum well–dots make it possible to create photodetectors with a bandwidth of up to 12.5 GHz and the processes of carrier thermalization from the quantum-well dot layers do not limit the speed under reverse biases of more than 5 V.
Kryzhanovskaya N., Blokhin S., Makhov I. et al., Физика и техника полупроводников 2023 Т. 57 № 3 С. 202-206
The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 µm and a length of the absorbing region ...
Added: June 27, 2023
Bristol : IOP Publishing, 2020
The 21st Russian Young Conference on Physics of Semiconductors and Nanostructures, Opto-and Nanoelectronics was held in Saint Petersburg on November 25 – 29, 2019. It was organized by Peter the Great St. Petersburg Polytechnic University.
The program of the Conference included semiconductor technology, heterostructures with quantum wells and quantum dots, opto-and nanoelectronic devices and new materials. A ...
Added: October 11, 2021
Springer, 2022
The 9th International Symposium “Optics and its Applications” was held in Yerevan & Ashtarak, Armenia from January 15 to 19, 2022. This Symposium was dedicated to the Academician of the National Academy of Sciences (NAS) of
Armenia, Prof. Eduard Kazaryan, on the occasion of his 80th birthday. Therefore, it is not accidental that many of the ...
Added: November 7, 2022
Mao G., Wang Q., Chai Z. et al., Materials Science in Semiconductor Processing 2018 Vol. 79 No. 6 P. 20-23
We realized the excellent confinement of carriers in single-layer InAs quantum dots (QDs) via introducing two
AlGaAs confining layers (CLs), and then fabricated the corresponding rolled-up InGaAs/GaAs QD microtubes by
conventional photolithography and wet-etching. Subsequently, the as-fabricated AlGaAs confined QD microtubes
were transferred to a Si-based SiOx substrate using a simple liquid-assisted substrate-on-substrate transfer
process, thus obtaining the microtube ...
Added: March 16, 2021
Максимов М. В., Nadtochiy A., Zhukov A., Письма в Журнал технической физики 2020 Т. 46 № 24 С. 11-14
High-speed photodetectors based on InGaAs / GaAs quantum well-dots nanostructures are investigated with frontal and edge input of radiation. Photodetector with 40 rows of quantum well-dots
demonstrated a spectral sensitivity up to 0.4 A / W in the range 900–1100 nm at a bias of –5 V.
The decay time constant of the pulse response of a ...
Added: October 30, 2020
Zhukov A., Applied Physics B: Lasers and Optics 2018 Vol. 124 No. 2 Article 21
We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots (~ 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, ...
Added: March 16, 2021
Budkin G. V., Makhov I. S., Firsov D. A., Journal of Physics: Condensed Matter 2021 Vol. 33 No. 16 Article 165301
The flow of electric current in quantum well breaks the space inversion symmetry, which leads to the dependence of the radiation transmission on the relative orientation of current and photon wave vector, this phenomenon can be named current drag of photons. We have developed a microscopic theory of such an effect for intersubband transitions in ...
Added: October 8, 2021
Мельниченко И. А., Комаров С. Д., Dragunova A. et al., Письма в Журнал технической физики 2024 Т. 50 № 5 С. 3-6
С помощью конфокальной оптической микроскопии и спектроскопии микрофотолюминесценции исследованы субмикронные нановключения InAsxP1-x/InP, сформированные методом селективного эпитаксиального роста в кремнии с использованием металлоорганической газофазной эпитаксии и расплавленной капли элемента III группы. Исследовано влияние расстояния между нановключениями на интенсивность фотолюминесценции, получены температурные зависимости фотолюминесценции в диапазоне 77-290 K. При комнатной температуре получено излучение в спектральном диапазоне 1.2 ...
Added: February 13, 2024
Zhukov A, Natalia Kryzhanovskaya, Scientific Reports 2019 Vol. 9 No. 1 P. 5635
The development of a fast semiconductor laser is required for the realization of next-generation
telecommunication applications. Since lasers operating on quantum dot ground state transitions
exhibit only limited gain due to the saturation effect, we investigate lasing from excited states and
compare its corresponding static and dynamic behavior to the one from the ground state. InAs quantum
dots (QDs) ...
Added: February 10, 2020
Bristol : Institute of Physics Publishing (IOP), 2020
7th International School and Conference "Saint-Petersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and Nanostructures was held on April 27 - 30, 2020. The Organizer of the conference is the Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences. Initially, the School and ...
Added: December 29, 2020
Zhukov A E, Optics Express 2018 Vol. 26 No. 11 P. 13985-13994
We report room temperature injection lasing in the yellow–orange
spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensilestrained
InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic
vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the
<111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier
insertions ...
Added: February 10, 2020
Mintairov S., Maximov M., Nadtochiy A. et al., Applied Physics Express 2020 Vol. 13 No. 1 Article 015009
Studies of electronic transitions in the photoconverters with In0.4Ga0.6As quantum well-dots (QWD) layers have been carried out. It is shown that the quantum yield and electroluminescence spectral peaks are well described by e1-lh1 and e1-hh1 optical transitions in the quantum well with the same average composition and thickness. The energy of the optical transitions shifts toward longer ...
Added: November 5, 2020
Melentiev P. N., Balykin V. I., Успехи физических наук 2019 Т. 189 № 3 С. 282-291
The main results obtained recently at the Laboratory of Laser Spectroscopy, Institute of Spectroscopy of the Russian Academy of Sciences in researching and developing various 2D optical elements for surface plasmon waves and their characterization using near-and far-field methods are presented. They include an optical medium for plasmon waves, a plasmon interferometer, a parabolic mirror ...
Added: December 20, 2019
Zhukov A., Institute of Physics Publishing (IOP), 2021
8th International School and Conference "Saint-Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures was held on May 25 - 28, 2021. The Organizers of the conference are the National Research University "Higher School of Economics" and Alferov Saint Petersburg National Research Academic University of the Russian Academy of Sciences. More than 300 participants from ...
Added: October 26, 2022
Duarte E. C., Sardella E., Teixeira Saraiva T. et al., / Cornell University. Series cond-mat "arxiv.org". 2022. No. 2209.
The presence of magnetic fields and/or transport currents can cause penetration of vortices in superconductors. Their motion leads to dissipation and resistive state arises, which in turn strongly affects the performance of superconducting devices such as single-photon and single-electron detectors. Therefore, an understanding of the dissipation mechanisms in mesoscopic superconductors is not only of fundamental ...
Added: November 7, 2022
Чупраков С. А., Блинов И. В., Загорский Д. Л. et al., Физика металлов и металловедение 2021 Т. 122 № 9 С. 933-939
In this work, by the method of matrix synthesis, nanowires (NPs) of various types were obtained - from pure cobalt, from an alloy of cobalt with copper and layer structures consisting of alternating layers of cobalt and copper of various thicknesses. Structural features of the arrays have been investigated by the method of nuclear magnetic ...
Added: November 12, 2021
Lounis B., Buzdin A. I., Physical Review B: Condensed Matter and Materials Physics 2022 Vol. 105 No. 2 Article L020504
We theoretically study the nonequilibrium dynamics of the order parameter of a superconducting ring inhomogeneously quenched through its transition temperature. Numerical simulations based on spectral decomposition of the time-dependent Ginzburg-Landau equation reveal that current-carrying superconducting states can be generated in the ring under certain fast local temperature quench conditions. We also show that illumination of ...
Added: December 10, 2022
E. I. Moiseev, N. V. Kryzhanovskaya, Zubov F. I. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.2 P. 25-30
This paper is the first study of the far-field patterns of semiconductor microlasers with an active region based on In0.4Ga0.6As/GaAs quantum well-dots. A theoretical model describing the far-field radiation pattern is developed. It is shown that in the vertical direction the radiation pattern has a narrow beam divergence (the most of the power is confined ...
Added: March 15, 2023
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2020 Т. 54 № 6 С. 570-574
A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a function of the ambient temperature and the microlaser diameter. It is shown that there exists a minimum microdisk diameter determined by self-heating, up to which continuous-wave lasing can be reached ...
Added: September 15, 2020
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Малеев Н. А., Васильев А. П., Кузьменков А. Г. et al., Письма в Журнал технической физики 2019 Т. 45 № 21 С. 29-33
High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse ...
Added: December 8, 2020
Shurakov A., Mikhailov D., Belikov I. et al., Journal of Physics: Conference Series 2020 Vol. 1695 No. 1 Article 012154
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, ...
Added: May 18, 2022
Зубов Ф. И., Максимов М. В., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2021 Т. 47 № 20 С. 3-6
The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power ...
Added: October 14, 2021
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., IEEE Journal of Quantum Electronics 2020 Vol. 56 No. 5 P. 1-8
We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for the peak optical power limited by the thermal rollover effect, the corresponding injection current and excess temperature of the device. The ...
Added: July 30, 2020