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Ultrafast electrical control of optical polarization in hybrid semiconductor structure
We theoretically analyze the dynamics of circular polarized photoluminescence (PL) associated with split-off
states emerging in a semiconductor quantum well (QW) due to tunnel coupling with remote spin-split bound
states. A mechanism for ultrafast PL polarization switching is proposed based on tunnel barrier transparency
modulation. Such modulation can be experimentally realized by applying a gate voltage to the semiconductor
heterostructure. The proposed mechanism is based on the split-off state energy level position being sensitive to
the transparency of the tunnel barrier. The obtained results open the possibility to form fully polarized PL signal
and are promising for applications in spintronics, in particular, for ultrafast polarization modulation in spin
lasers.