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Regular version of the site
Of all publications in the section: 7
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Article
Makhov I. S., Vinnichenko M. Y., Vorobjev L. E. et al. Physica E: Low-Dimensional Systems and Nanostructures. 2020. Vol. 124.

The results of the theoretical and experimental investigations of optical response of the acceptor centers in narrow GaAs/AlGaAs quantum wells in the infrared spectral range are presented. In the theoretical part, we focused on the probabilities of the photoionization of acceptor centers taking into account the complicated valence band structure and intermixing the light and heavy hole states. We used the finite-difference method to quantize the Luttinger-Kohn Hamiltonian and the decomposition of the impurity potential over the eigenstates of this Hamiltonian with the quantum well profile to obtain the acceptor state energies and wavefunctions in momentum space. The momentum-dependent decomposition coefficients were used to calculate the optical matrix elements of the hole transitions from localized acceptor states to 2D continuum states in dipole approximation. Calculated spectral and polarization dependencies of the infrared optical absorption due to photoionization of acceptors are discussed. Equilibrium absorption spectra of the polarized infrared radiation were measured in a wide temperature range. Spectral positions of the observed absorption peaks are in satisfactory agreement with theoretical calculations.

Added: Oct 11, 2021
Article
Maslova N., Arseyev P., Mantsevich V. Physica E: Low-Dimensional Systems and Nanostructures. 2019. Vol. 113. P. 8-13.

We present a theoretical analysis of relaxation processes in a correlated quantum dot (QD) coupled to a reservoir in the presence of electron-phonon interaction. The eff ect of both electron-phonon interaction and Coulomb correlations on system's kinetics is analyzed by means of equations of motion for generalized non-equilibrium Green's functions. It is shown that phonon-assisted tunneling enhances the relaxation processes in a correlated quantum dot. Moreover, electron-phonon interaction changes stationary values and typical relaxation rates of the second-order correlation functions for localized electrons. In spite of the fact that electron-phonon interaction is spin independent, it strongly influences spin correlations in the presence of Coulomb interactions between localized electrons. This effect appears to be due to phonon-induced spin- flip processes of localized electrons

Added: Oct 9, 2019
Article
Siahlo A. A., Popov A. M., Poklonski N. A. et al. Physica E: Low-Dimensional Systems and Nanostructures. 2020. Vol. 115. P. 113645-1-113645-6.

The scheme and operational principles of graphene-based nanoelectromechanical system (NEMS) for study of interaction between graphene and surface of a sample is proposed. In such a NEMS multilayer graphene membrane bends due to van der Waals attraction between surface of graphene membrane and surface of a sample attached to a manipulator. An analysis of the NEMS total energy balance shows that the NEMS is bistable and abrupt transition between the stable states occurs if the sample is moved toward and backward the membrane. The detection of the interface distances corresponding to these transitions can be used to fit parameters of interatomic potentials for interaction between atoms of the surfaces of the graphene membrane and the sample. The analytical expression for dependences of this transition distances on NEMS sizes and parameters of the potential are derived on example of Lennard-Jones potential. For graphene-graphene interaction the transition distance is estimated to be from several nanometers to several tens nanometers for possible sizes of the proposed NEMS and thus can be measurable for example by transmission electron microscopy. Possibility of this NEMS implementation and application to study graphene-metal interaction are discussed.

Added: Oct 30, 2020
Article
Siahlo A., Popov A., Poklonski N. et al. Physica E: Low-Dimensional Systems and Nanostructures. 2016. Vol. 84. P. 346-353.

The scheme and operational principles of the nanoelectromechanical memory cell based on the bending of a multi-layer graphene membrane by the electrostatic force are proposed. An analysis of the memory cell total energy as a function of the memory cell sizes is used to determine the sizes corresponding to a bistable memory cell with the conducting ON and non-conducting OFF states and to calculate the switching voltage between the OFF and ON states. It is shown that a potential barrier between the OFF and ON states is huge for practically all sizes of a bistable memory cell which excludes spontaneous switching and allows the proposed memory cell to be used for long-term archival storage.

Added: Oct 18, 2016
Article
Shchepetilnikov A., Khisameeva A. R., Nefyodov Y. et al. Physica E: Low-Dimensional Systems and Nanostructures. 2020. Vol. 124.

The spin-orbit coupling was investigated in a series of AlAs quantum wells with different width containing high quality two dimensional electron systems. The interaction between the spin degree of freedom and the orbital motion of the electrons in the regime of the integer quantum Hall effect induced the filling factor dependent renormalization of the electron g-factor. Such g-factor modification probed by electron spin resonance was well resolved in all of the samples studied in a wide range of magnetic fields. Theoretical analysis of this phenomenon allowed us to identify the Dresselhaus-like spin-orbit interaction as the dominant term and to measure its strength β. The value of β turned out to depend rather weakly on the quantum well width, yet such a behavior agrees well with the theoretical calculations. The bulk Dresselhaus constant extracted from the fit turned out

Added: Dec 10, 2020
Article
Rozhansky I. V., Mantsevich V., Maslova N. et al. Physica E: Low-Dimensional Systems and Nanostructures. 2021. Vol. 132.

We theoretically analyze the dynamics of circular polarized photoluminescence (PL) associated with split-off states emerging in a semiconductor quantum well (QW) due to tunnel coupling with remote spin-split bound states. A mechanism for ultrafast PL polarization switching is proposed based on tunnel barrier transparency modulation. Such modulation can be experimentally realized by applying a gate voltage to the semiconductor heterostructure. The proposed mechanism is based on the split-off state energy level position being sensitive to the transparency of the tunnel barrier. The obtained results open the possibility to form fully polarized PL signal and are promising for applications in spintronics, in particular, for ultrafast polarization modulation in spin lasers.

Added: Oct 21, 2021
Article
Rozhansky I., Mantsevich V., Maslova N. et al. Physica E: Low-Dimensional Systems and Nanostructures. 2021. Vol. 132. P. 1-8.

We theoretically analyze the dynamics of circular polarized photoluminescence (PL) associated with split-off states emerging in a semiconductor quantum well (QW) due to tunnel coupling with remote spin-split bound states. A mechanism for ultrafast PL polarization switching is proposed based on tunnel barrier transparency modulation. Such modulation can be experimentally realized by applying a gate voltage to the semiconductor heterostructure. The proposed mechanism is based on the split-off state energy level position being sensitive to the transparency of the tunnel barrier. The obtained results open the possibility to form fully polarized PL signal and are promising for applications in spintronics, in particular, for ultrafast polarization modulation in spin lasers.  

Added: Jun 22, 2021