Passive mode-locking of p-doped quantum dot semiconductor lasers

P. 012068-1–012068-6.

Maximov M., Zhukov A.

Quantum dot based monolithic edge-emitting semiconductor lasers at 1.25 m are
ideal sources for the generation of broad optical frequency combs for optical communication
applications. In this work, InAs/InGaAs quantum dot lasers with dierent total laser length to
absorber length ratio and with dierent p-doping concentrations in the GaAs barrier sections
are investigated experimentally in dependence on the gain injection current and absorber reverse
bias voltage. A smaller mode-locking area is found for the p-doped device in dependence on
the laser biasing conditions. For the undoped active region 1.3 ps short pulse widths at a pulse
repetition rate of 20 GHz with a pulse-to-pulse timing jitter of 111 fs are reported for an absorber
section length of 12% to the total cavity length. For an undoped and p-doped device short pulse
emission between 2.5 ps and 5.5 ps is attained and a shorter absorber section length of 8% or
5%.

Keywords: quantum dots, mode-locked laser

In book

7th International School and Conference "Saint-Petersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and Nanostructures

Vol. 1695: 7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation. , Bristol: Institute of Physics Publishing (IOP), 2020.