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Светоизлучающие структуры для кремниевой оптоэлектроники на основе локально растянутых Ge микроструктур
С. 70-70.
Новиков А. В., Юрасов Д. В., Яблонский А. Н., Байдакова Н. А., Морозова Е. Е., Verbus V. A., Гусев Н. С., Шенгуров Д. В., Нежданов А. В., Машин А. И.
In recent years, Ge has become one of the key materials in silicon photonics. In particular, considerable hopes are associated with the use of deformed (stretched) Ge to solve the problem of creating an effective near-IR radiation source on silicon. This paper presents the results of the formation of uniaxially deformed Ge microstructures and the study of their luminescence spectra.
In book
Институт физики полупроводников им. А.В. Ржанова СО РАН, 2019