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Submicron-Size Emitters of the 1.2–1.55 um Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate
We study photoluminescence of InP/InAsP/InP nanostructures monolithically integrated
to a Si(100) substrate. The InP/InAsP/InP nanostructures were grown in pre-formed pits in the
silicon substrate using an original approach based on selective area growth and driven by a molten
alloy in metal–organic vapor epitaxy method. This approach provides the selective-area synthesis of
the ordered emitters arrays on Si substrates. The obtained InP/InAsP/InP nanostructures have a
submicron size. The individual InP/InAsP/InP nanostructures were investigated by photoluminescence
spectroscopy at room temperature. The tuning of the emission line in the spectral range from
1200 nm to 1550 nm was obtained depending on the growth parameters. These results provide a path
for the growth on Si(100) substrate of position-controlled heterojunctions based on InAs1xPx for
nanoscale optical devices operating at the telecom band.