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June 11, 2026
Doctoral Student at HSE University Reveals Hidden Layout of Ancient Parion
İdil Malgil, a researcher at HSE University, conducted a UAV-based LiDAR survey of the ancient Roman city of Parion in present-day Turkey. The high density of the scans allowed the team to detect subtle terrain features concealed beneath the ground and vegetation. The survey revealed traces of entire neighbourhoods, terraced structures, and walls that had remained invisible during routine excavations and could not be identified through aerial photography. The findings have been published in Ancient Civilizations from Scythia to Siberia.
June 11, 2026
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Mathematicians at HSE University–Nizhny Novgorod, in collaboration with colleagues from Tongji University in Shanghai, are investigating the fundamental causes of structural stability in systems and the mechanisms underlying its disruption. In this interview with the HSE News Service, Prof. Olga Pochinka, Head of the International Laboratory of Dynamical Systems and Applications at HSE University–Nizhny Novgorod and leader of the project ‘Qualitative Theory of Systems of Ordinary and Partial Differential Equations,’ discusses the project, which is being implemented as part of HSE University's International Academic Cooperation programme.
June 11, 2026
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Submicron-Size Emitters of the 1.2–1.55 um Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate

Nanomaterials. 2022. Vol. 12. No. 23. Article 4213.
Melnichenko I., Moiseev E., Kryzhanovskaya N., Makhov I., Nadtochiy A., Zhukov A.

We study photoluminescence of InP/InAsP/InP nanostructures monolithically integrated
to a Si(100) substrate. The InP/InAsP/InP nanostructures were grown in pre-formed pits in the
silicon substrate using an original approach based on selective area growth and driven by a molten
alloy in metal–organic vapor epitaxy method. This approach provides the selective-area synthesis of
the ordered emitters arrays on Si substrates. The obtained InP/InAsP/InP nanostructures have a
submicron size. The individual InP/InAsP/InP nanostructures were investigated by photoluminescence
spectroscopy at room temperature. The tuning of the emission line in the spectral range from
1200 nm to 1550 nm was obtained depending on the growth parameters. These results provide a path
for the growth on Si(100) substrate of position-controlled heterojunctions based on InAs1􀀀xPx for
nanoscale optical devices operating at the telecom band.

Research target: Physics Nanotechnologies
Language: English
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DOI
Text on another site
Keywords: silicon photonicsIII-V on Siкремниевая фотоника photoluminescenceА3В5 на кремниифотолюминесценция
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