Investigation of Electrostatic Discharge Effect on High-power Mosfet-Transistors Considering the Influence of PCB

P. 1–4.

Konstantinov, U.A.,, Pozhidaev, E.D., Tumkovskiy S.R.

Computer simulations of electrostatic discharges (ESD) effect on high-power MOSFET-transistors with built-in 
protection  have  been  carried  out.  It  was  found  that  the transistors with low gate-source capacitance are more sensitive to the ESD effect.The  dependence  between  printed  circuit  board  (PCB) 
capacity,  causing  breakdown  of  MOSFET-transistor  gate dielectric, and ESD voltage was established. 
It  is  shown  that  for  transistor  haying  low  gate-source capacitance,  the  existence  of  the  built-in  protection  does  not prevent gate dielectric breakdown at electrostatic discharges.  It is recommended to provide external ESD protection for high-power  MOSFET-transistors  with  built-in  protection having low gate-source capacitance, for example, having turned on the ESD protection diode in the electric circuit. 

Keywords: computer simulations, electrostatic discharges, ESD protection, high-power MOSFET-transistors

Publication based on the results of: ­­­Studies of charge carrier transport in polymers intended for use in spacecraft and solar energy technologies (2019)

In book

2019 International Seminar on Electron Devices Design and Production (SED)

IEEE, 2019.