2019 International Seminar on Electron Devices Design and Production (SED)
Proceedings. - Prague, April 23–24, 2019. IEEE Catalog Number: CFP19P59-CDR. ISBN: 978-1-5386-6524-4.
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The paper presents the results of air penetration strength experimental studies for a two-electrode system consisting of a small radius and plane hemispheres as the method of technical equipment testing for determining their resistance to electrostatic discharges. The hemisphere radius is much smaller than the distance between the electrodes, so the mathematical expression is used since the 50s of the last for the formal determination of the electric field intensification (gain) coefficient value on the hemisphere radius normally directed to the plane. Because of comparing the experimental data obtained by the magnitude of the electric field gain with the calculated values using the above formulas, it was concluded that these expressions are applicable for solving more complex physical and technical problems related
A review and analysis of existing solutions for creating a system for collecting and converting the energy of HF radiation on the Internet of Things is conducted. We propose our development of a system for collecting and converting the energy of HF radiation on the Internet of Things. The result is a proprietary development of a system for collecting and converting high-frequency radiation energy, ready to work at a distance of no more than 0.94 meters from the Wi-Fi router according to the IEEE 802.11 standard. The output voltage in case of continuous operation of our harvester is 3.3 V, which is enough for power supply: temperature sensors with digital output, humidity sensors, and atmospheric pressure sensors. It is possible to achieve an increase in the working distance by increasing the power of the source of electromagnetic waves, to improve the gain of the transmitting and receiving antenna, or to increase the number of receiving antennas.
In this paper, we would like to suggest the algorithm of optoelectronic devices’ thermal working modes providing method. It solves the problem of gaining the projected working accuracy in high heat load including internal heat release on electronic components of printed circuit assemblies and optical part of optoelectronic device – the problem that is often faced by optoelectronic devices’ designers. We focus on implementation of this method in Zeeman-based frequency biasing laser gyroscope also known as Zeeman laser gyroscope. Below was given the example of the electronic assembly/component thermal model testing and Zeeman laser gyroscope thermal model was built. Note that the using method is applicable not only for Zeeman laser gyroscope but also for vast variety of optoelectronic devices. Implementation of this method in optoelectronic devices’ design allows us to get system approach and improve reliability and working accuracy to required levels.
The methods under the generalized name Foresight have proven to be the most effective tool for selecting long-term priorities in science and technology in various industries, the success of which ultimately effects the socio-economic development of the country. The strategic forecast in the humanitarian and technical areas often relies on statistical modeling (extrapolation to the forecast horizon, correlation, and regression analyzes, etc.). The Foresight Modeling method can most productively effect the development of the following approaches: Delphi, critical technologies, development of scenarios (options), technological roadmaps, relevance trees, analysis of mutual influence, and the formation of expert panels. In this paper, Foresight Modeling is developed in order to solve problems of ensuring high quality and reliability in the early stages of development of space electronic equipment, considering the relationship of electrical and thermal processes in it. It proposes to combine two existing groups of expert specialists in modeling w1ith dissimilar electrical and thermal factors into a single group in accordance with the integration of the mutual influence of the processes.
Computer simulations of electrostatic discharges (ESD) effect on high-power MOSFET-transistors with built-in protection have been carried out. It was found that the transistors with low gate-source capacitance are more sensitive to the ESD effect.The dependence between printed circuit board (PCB) capacity, causing breakdown of MOSFET-transistor gate dielectric, and ESD voltage was established. It is shown that for transistor haying low gate-source capacitance, the existence of the built-in protection does not prevent gate dielectric breakdown at electrostatic discharges. It is recommended to provide external ESD protection for high-power MOSFET-transistors with built-in protection having low gate-source capacitance, for example, having turned on the ESD protection diode in the electric circuit.
Abstract— Applicants often do not choose technical education because of the difficulty of this sphere or the lack of engineering knowledge and real engineering practices that is so important. This issue opens up a new development space for educational software for the beginners and non-professional users. Such problem as the difficulty of choosing and obtaining an engineering education is considered. This paper presents an investigation of the electrical circuits and development of a program module for the schemes’ analysis that could be easily embedded in educational establishments. Existing technics for analyzing electrical schemes were observed and the most effective one was chosen. The main goal was reached by using the WPF technology of .NET Framework. Altogether, the research provides a simple instrument for circuit analysis that gives some helpful information about electricity and the circuitry. It automates verification of practical tasks and exercises made by students and allows to refuse the use of complex electrical stands. Furthermore, the developed application can be integrated into the educational system as a tool for teaching staff and development of popularity for technical specializations.
The numerical optimization method for calculating regulators has been used more frequently. The toolkit of the method includes various regulator structures, including pseudolocal loops regulators, regulators with a reference model, or with a Smith's predictor, with a bypass channel, regulators using the open model, etc. The arsenal of cost functions for optimization is also quite diverse. It includes the integral of the error module or the squared error and often this value is recommended to be multiplied by the time from the moment of the transient process. In addition, recommendations that use the compound aim functions are known. In this case, it is recommended to use an error growth detector (an overshoot detector) including a reverse overshoot and some other terms that increase the cost function, which allows adjusting the optimization result in the desired direction. It seems that this arsenal of funds is sufficient for any case encountered in practice. This paper investigates the possibility of solving the control problem for an oscillatory unstable object using all known methods for solving ones. It is shown that for some object models it is extremely difficult to obtain a satisfactory solution, and the set of known methods based on numerical optimization is insufficient. In this case, an object of the third order, containing negative coefficients in the polynomials of the numerator and denominator were chosen. The possibilities of using a PID-regulator, a bypass channel, or the open model of the object are investigated. The best solution among the robust ones is still characterized by a reverse overshoot of 70 %, which demonstrates the complexity of the solved problem and the inadequacy of the known tools in the form of regulator structures set and techniques for formation of a aim function. The method of additional control of the complex system obtained by using an external I-regulator is proposed. The efficiency of this method is shown with regard to the method of numerical optimization of the this regulator coefficients is not operational, and the factor for an external integrator is easily found empirically.
The effective decision of continuous increase of technological level and the economic efficiency of semiconductor manufacturing demands the adequate statistical models describing distribution of defects and yield. In the paper, motivated by semiconductor manufacturing, we study a problem of data association of condition of technological process. This work presents a yield analysis method using basic operating defect information to statistically define essential original causes of yield loss in semiconductor manufacturing. Using simple statistics on yield loss percent, this method provides the process list on influence of yield loss. This tool is also applied to selection of the most effective inspection tool. Complete understanding of the inspection equipment is not required for its statement. Analysis by sizes and types of defects provides decision and elimination of defects. The paper aspires to offer the model of yield loss percent distributions in semiconductor manufacturing based on estimations of operator-technologists directly in the IC manufacturing. A wide range of alternative modeling approaches has been carried out up to now. Also the large variety of criteria and tests has been used to estimate of the forecast accuracy on various volume of dataset. Results offer a robust comparative tools if we have a full source of the information for process. The described method could be especially useful tool for the persons making decision. Besides, models allow to receive valuable forecasts for turning points when various improvements implemented into technological process. It allows to predict somewhat result of process and to catch a trend. This model may be extended for the yield forecasting using a similar approach.
One of the promising areas of microwave resonator systems application is the possibility of their use as frequency-selective structures for the control of physical quantities and monitoring of process parameters. It is possible to determine parameters of planar dielectric materials – dielectric permittivity and dielectric loss tangent by measuring electrodynamic characteristics of a cylinder resonator with H011 mode. Here we present the results of analytical assessment, computer modeling in Ansoft HFSS v.12 and experimental data. The measurement error in determining the dielectric parameters of the material does not exceed a fraction of a percent of the table values.
In order to assess the level of electronic means reliability, it is necessary to have a methodology for analyzing the results of calculating its reliability indicators, such as the probability of failure-free operation or mean time between failures, which allows to evaluate which of the parameters most strongly affects the final value of the failure rate of electronic component particular type. As a result of analyzing the reliability of electronic mean all-levels components, the engineer should obtain the values of the reliability indicators, the boundary values of the controlled parameters, and also give recommendations on certain changes necessary to improve the reliability, thereby implementing the reliability management methodology. This technique, in contrast to the already known ones, will allow analyzing the calculated values of the indicators and using the relative sensitivity function to determine the contribution made by specific parameters: temperature, element ratings, their operating voltage, current, power, tolerance level, while previously contribution was estimated by the numerical value of a separate correction factor. Application of the developed methodology for analyzing the results of calculating the reliability of electronic means allows to specify the recommendations for changing parameters in order to improve the reliability of the elements that make up the product in question.