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September 11, 2026
How to Assess Students Knowledge in the Age of AI
A researcher at HSE University has proposed a flowchart to help lecturers decide how to assess students who use artificial intelligence. It shows where the use of AI should be restricted and where it can be incorporated into the learning process. The article has been published in IT Professional.
September 9, 2026
‘Balkan Hospitality Opens Doors: Studying Dialects on the Verge of Extinction
You cannot study spoken dialects from books. Instead, you need to go to a village, seek out its elders, and earn the trust of local residents before you can record hours of spontaneous stories. This is how Natalia Muravleva, Associate Professor at the Faculty of Humanities, conducts her research. Her internship in Serbia continued her long-standing study of dialects spoken by Macedonian settlers. In this interview, she discusses how diaspora cultural centres help researchers reach informants, why native speakers need to be interviewed only in their own language (otherwise, as she puts it, they may 'break'), and how a single field season helped her finalise her monograph. She also shares warm memories of autumn in Belgrade and of colleagues with whom grammar can be discussed in three languages at once.
September 9, 2026
Scientists Train Neural Network to Generate Process Plans from 3D Models
Researchers at the HSE FCS AI and Digital Science Institute have developed CAD2TechSpec, a framework that converts 3D models of mechanical parts into machining process plans—step-by-step instructions for machine tools. The solution aims to reduce the time required for the design and preparation of technical process documentation in mechanical engineering, aircraft manufacturing, and other high-tech industries. The study findings have been published in PeerJ Computer Science.

 

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Fault Simulation in Radiation-Hardened SOI CMOS VLSIs using Universal Compact MOSFET Model

P. 117–122.
Petrosyants K. O., Sambursky L. M., Kharitonov I. A., Lvov B. G.

The methodology of modeling and simulation of environmentally induced faults in radiation hardened SOI CMOS ICs is presented. For this purpose, the universal compact SPICE SOI MOSFET model with account for TID, dose rate and single event effects is used. First, the model parameters extraction procedure is described in more details taking into consideration radiation effects and peculiarities of novel radiation-har­dened (RH) SOI MOS structures. The results of analog and digital SOI CMOS circuits simulation show the difference with experimental data not more than 10‒20% for all types of radiation.

Language: English
Full text
DOI
Keywords: radiation hardnessmodel parameter extractionmodelSOI CMOS circuitfault modelingdose rate
Publication based on the results of:
Моделирование воздействия тепловых и радиационных эффектов на микроэлектронные компоненты (2015)

In book

Proceedings of the IEEE Latin-American Test Symposium (LATS-2016)
Proceedings of the IEEE Latin-American Test Symposium (LATS-2016)
NY: The Institute of Electrical and Electronics Engineering, Inc., 2016.
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