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May 12, 2026
‘Any Real-Economy Company Can Use Our Products
The HSE Centre for Financial Research and Data Analytics combines fundamental and applied work, including in areas unique to Russia such as the connection between sentiment in the media and social networks and financial markets. The HSE News Service spoke with the centre’s director, Professor Tamara Teplova, about its work.
May 7, 2026
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An international team of researchers, including physicists from HSE MIEM, has demonstrated that nonmagnetic impurities can help more accurately reveal Majorana zero modes—quantum states considered promising building blocks for quantum computing. The researchers found that these impurities shift the energy levels that typically obscure the Majorana signal, while leaving the mode itself largely unaffected, thereby making its spectral peak more distinct. The study has been published in Research.
May 6, 2026
The Future of Cardiogenetics Lies in Artificial Intelligence
Researchers from the AI and Digital Science Institute at the HSE Faculty of Computer Science have developed a program capable of analysing regions of the human genome that were previously inaccessible for accurate interpretation in genetic testing. The program adapts large generative AI (GenAI) models for cardiogenetics to predict how specific mutations affect the function of individual genes.

 

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Charged Board Model ESD Simulation for PCB Mounted MOS Transistors

IEEE Transactions on Electromagnetic Compatibility. 2015. Vol. 57. No. 5. P. 947–954.
Kechiev L., Kuznetzov V. V.

In this paper, power MOS transistor behavior under charged board model (CBM) ESD impact is considered. The anal­ysis of the MOSFET failure condition at the CBM ESD event is performed. The CBM equivalent circuit is proposed. The physi­cal parameters of the PCB and device under test are replaced by the lumped RCL circuit. The MOSFET failure voltage calculation method is developed. This method is based on the transient anal­ysis of the CBM ESD equivalent circuit with the general purpose open-source circuit simulator Qucs. This simplified method allows us to calculate CBM ESD voltage dangerous for the MOSFET with less than 20% error for some application cases (pins without ESD protection). CBM ESD tests are performed. Simulation and measurement results are in good match.

Priority areas: engineering science
Language: English
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Keywords: испытаниеэлектростатический разрядпечатная платаМОП-транзисторMOSFETelectrostatic dischargecircuit simulationPrinted Circuit BoardCharged board eventcharged device model
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