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Book chapter

Фотоэмиссия свободных носителей заряда в высокоомный полупроводник при освещении омических контактов

С. 220-222.
Лысенко А. П., Григорьев Ф. И., Строганкова Н. И., Голубятников В. А., Шадов М. Б.

The photoemission of free charge carriers into high-ohmic semiconductor created by light illumination of near-contact-area of ohmic contacts to cadmium telluride sample was investigated. It was revealed, that near-contact-area light illumination influences both on contact transition resistance and on volume conductivity of the crystal due to increasing of main charge carrier concentration. The method of separate determination of contact transition and sample volume resistances, suitable for high-ohmic semiconductors, was suggested.