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  • Фотоэмиссия свободных носителей заряда в высокоомный полупроводник при освещении омических контактов
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News
May 25, 2026
HSE Scientists Train Neural Network to 'Hear' Faults in Electric Motors
Researchers at the AI and Digital Science Institute of the HSE Faculty of Computer Science have developed a new method—the Signature-Guided Data Augmentation (SGDA) framework—that achieves 99% accuracy in motor fault detection and 86% accuracy in fault classification. The application of this approach can reduce industrial equipment repair costs, minimise downtime, and improve production safety. The study results have been published in Engineering Applications of Artificial Intelligence.
May 25, 2026
'The Humanities Serve as a Conscience'
Maria Mizernaia studies Soviet literature and the history of book publishing. In this interview for the HSE Young Scientists project, she discusses plans to publish a novel about besieged Leningrad, AI-provoked reflections on what it means to be human, and how novels can help satisfy our dopamine hunger.
May 25, 2026
Is It Possible to Predict a Citys Life Based on the Shape of Its Neighbourhoods?
Is it possible to predict, based on the configuration of streets and buildings, where a café will open or where traffic congestion will occur? Participants in the Spatial Analysis and Modelling of Urban Processes research and study group use open data and machine learning to identify universal patterns. Alexander Sheludkov and Eduard Somov discuss the purpose of comparing cities, the need for new forms of urban statistics, and how open data is transforming approaches to urban studies.

 

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Фотоэмиссия свободных носителей заряда в высокоомный полупроводник при освещении омических контактов

С. 220–222.
Lysenko A. P., Grigoryev F. I., Strogankova N. I., Golubiatnikov V. A., Шадов М. Б.

The photoemission of free charge carriers into high-ohmic semiconductor created by light illumination of near-contact-area of ohmic contacts to cadmium telluride sample was investigated. It was revealed, that near-contact-area light illumination influences both on contact transition resistance and on volume conductivity of the crystal due to increasing of main charge carrier concentration. The method of separate determination of contact transition and sample volume resistances, suitable for high-ohmic semiconductors, was suggested.

Language: Russian
Full text
Keywords: semiconductorsполупроводникиомические контактыфотоэмиссияohmic contactsphotoemission

In book

Вакуумная наука и техника: Материалы ХХ юбилейной научно-технической конференции
М.: МИЭМ НИУ ВШЭ, 2013.
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