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Дифракция и рассеяние рентгеновских лучей в кристаллах кремния, облученных протонами
С. 70-72.
Smirnov I. S., Novoselova E., Dyachkova I. G.
In book
Великий Новгород : Новгородский филиал Санкт-Петербургского государственного университета сервиса и экономики, 2011
Cтруктурные особенности кристаллов кремния, подвергнутых облучению протонами и термической обработке
Smirnov I. S., Novoselova E., Dyachkova I. G., В кн. : Труды XXIII Международной конференции "Радиационная физика твердого тела" (Севастополь, 8 июля - 13 июля 2013). : М. : ФГБНУ "НИИ ПМТ", 2013. С. 211-215.
The structure of silicon crystals implanted with protons was studied by methods of high-resolution X-ray diffraction . The distribution of strain in the disturbed layers was analyzed. ...
Added: February 20, 2014
Dyachkova I. G., Novoselova E., Smirnov I. S., В кн. : Труды XXIV Международной конференции "Радиационная физика твердого тела" (Севастополь, 7 июля - 12 июля 2014г.). : М. : ФГБНУ "НИИ ПМТ", 2014. С. 512-518.
The effect of stress of different signs on the processes of radiation defect formation in the crystalline silicon is presented . The calculation of the state of thin circular plate with the surface layer under the deformation is shown as well. ...
Added: March 11, 2015
Reznik R. R., Gridchin V. O., Kotlyar K. P. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 31-35
In this work, we have studied the physical properties of InGaAs quantum dots (QDs) in AlGaAs nanowires (NWs) synthesized on silicon at different temperatures. The results of the studies have shown that, a decrease in the growth temperature leads to an increase in the mole fraction of indium in the InGaAs QD solid solution. In ...
Added: March 14, 2023
Reznik R., Ilkiv I., Kotlyar K. et al., Physica Status Solidi - Rapid Research Letters 2022 Vol. 16 No. 7 Article 2200056
Combinations of III–V nanowires (NWs) with quantum dots (QDs) are promising building blocks for quantum light sources. Herein, for the first time, the results of growing AlGaAs NWs with InGaAs QDs by molecular-beam epitaxy on a silicon substrate are shown. The optimal growth temperature is determined and the physical properties of the grown nanostructures are ...
Added: September 27, 2022
Шалеев М. В., Новиков А. В., Юрасов Д. В. et al., В кн. : Труды XXII Международного симпозиума «Нанофизика и Наноэлектроника» 2018 г., Нижний Новгород. Т. 2: секция 3.: Н. Новгород : Нижегородский государственный университет им. Н.И. Лобачевского, 2018. С. 815-816.
An original method has been developed for nanotexturing the surface of crystalline silicon, based on the use of GeSi self-focusing nanoislands as a mask for anisotropic etching of Si. The developed method is characterized by a small thickness of the removed silicon and allows in a wide spectral range to significantly reduce the reflection from ...
Added: October 25, 2019
Zelenina A. I., Gordeev I. S., Kolotova L., Journal of Non-Crystalline Solids 2023 Vol. 606 Article 122215
Plasmonic nanoobjects have many applications from biosensors to electronic device components. The most promising method for obtaining such objects is the laser printing method due to the possibility of controlling the resulting structure by experimental conditions. In this work, the influence of laser printing initial parameters and Al content on silicon-aluminum nanoparticles (NPs) structure were investigated by a combination ...
Added: June 28, 2023
Смирнов И. С., Сахарова И. Г., Астахов В. П. et al., Известия высших учебных заведений. Материалы электронной техники 2001 № 1 С. 16-19
Изучено влияние протонного облучения и температуры последующего отжига на толщину, среднюю относительную деформацию кристаллической решетки, профили распределения удельного сопротивления вблизи поверхности тестовых кристаллов, а также на обратную ветвь вольт-амперной характеристики p-i-n-фотодиодов на основе высокоомного кремния. Обнаружено формирование компенсированного дефектного слоя в области пробега протонов непосредственно после облучения и после отжига при температурах до 200 С. ...
Added: March 22, 2013
Smirnov I. S., Novoselova E., Monakhov I. et al., Russian Microelectronics 2014 Vol. 43 No. 8 P. 587-589
The monitoring methods for measuring the film structure parameters in formation process, namely, the in situ methods, are currently of special significance. Their application provides obtaining the films with the given characteristics, which results in a fast correction of the technological modes. The possibilities of the in situ method of the X-ray reflectometry for defining ...
Added: March 11, 2015
Melnichenko I., Kryzhanovskaya N., Berdnikov Y. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 260-264
We present a photoluminescence study of InP nanostructures monolithically integrated to Si (100) substrate. The InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach by metal–organic vapor phase epitaxy via selective area growth driven by molten alloy. The obtained InP/Si nanostructures have submicron size above and below substrate surface. ...
Added: March 14, 2023
Vladimir M. Shevlyuga, Vorontsova Y., Tatiana V. Pavlova, Journal of Physical Chemistry C 2023 Vol. 127 No. 19 P. 8978-8983
The adsorption of PBr3 on the Si(100)-2 × 1 surface was studied by scanning tunneling microscopy (STM) and density functional theory (DFT). The PBr3 molecule completely dissociates on the Si(100) surface at room temperature into P and Br atoms. In most cases, the dissociated molecule was observed in STM on three neighboring Si dimers. DFT calculations confirm ...
Added: May 29, 2023
Reznik R. R., Gridchin V. O., Kotlyar K. P. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.1 P. 153-157
AlGaAs nanowires with InAs quantum dots on the silicon surface were synthesized by molecular-beam epitaxy. Morphological and optical properties of grown nanostructures were studied. It is important to note, that emission from quantum dots is observed in the wavelength range from 780 to 970 nm. Assumptions about the nature of short-wave radiation from quantum dots ...
Added: July 3, 2023
Мельниченко И. А., Комаров С. Д., Dragunova A. et al., Письма в Журнал технической физики 2024 Т. 50 № 5 С. 3-6
С помощью конфокальной оптической микроскопии и спектроскопии микрофотолюминесценции исследованы субмикронные нановключения InAsxP1-x/InP, сформированные методом селективного эпитаксиального роста в кремнии с использованием металлоорганической газофазной эпитаксии и расплавленной капли элемента III группы. Исследовано влияние расстояния между нановключениями на интенсивность фотолюминесценции, получены температурные зависимости фотолюминесценции в диапазоне 77-290 K. При комнатной температуре получено излучение в спектральном диапазоне 1.2 ...
Added: February 13, 2024
Pavlova T., Shevlyuga V.M., Andryushechkin B. V. et al., Physical Review B: Condensed Matter and Materials Physics 2020 Vol. 101 No. 23 P. 235410-235410
We insert and manipulate a single chlorine atom in chlorine monolayer on a Si(100)-2 × 1 surface using a scanning tunneling microscope. Two objects were created—a Cl atom in a groove between two dimer rows, and bridge-bonded Cl on a silicon dimer. Changing the voltage polarity leads to conversion of the objects into each other. ...
Added: November 16, 2020
М. : МАКС Пресс, 2020
This issue provides abstracts of XIII International Conference «Silicon – 2020» and XII Young Scientists Scholarship participants presentations devoted to the actual problems of silicon electronics and nano-devices. Presentations touch issues of advanced electronic elements, their fabrication processes and the way of application. Beside traditional topics of silicon bulk, surface and interface interaction influence upon ...
Added: November 29, 2020
Pavlova T., Physical Chemistry Chemical Physics 2020 Vol. 22 P. 21851-21857
Hydrogen can be inserted into Si(100)-2 × 1-H during surface preparation or during the hydrogen desorption lithography used to create atomic-scale devices. Here, a hydrogen atom inserted into a hydrogen monolayer on the Si(100)-2 × 1 surface has been studied using density functional theory. Hydrogen-induced defects were considered in their neutral, negative, and positive charge ...
Added: November 2, 2020
Smirnov I. S., Monakhov I., Егоров А. А. et al., Известия высших учебных заведений. Материалы электронной техники 2013 № 1 С. 34-37
At present particular attention is given to techniques which allow the monitoring of single layer and multilayer thin film materials directly during their formation - in-situ methods. Application of these methods helps to ensure a film with desired characteristics, allowing quickly adjust process conditions. The paper describes the possibilities of the in-situ X-ray reflectivity ...
Added: March 19, 2013
Verbus V. A., Novikov A. V., Yurasov D. V. et al., Semiconductors 2018 Vol. 52 No. 11 P. 1442-1447
The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically. This analysis indicates that, in order to attain the maximum tensile strain within a microbridge, the accumulation of strain in all corners of the ...
Added: December 26, 2018
Starikov S., Gordeev I., Lysogorskiy Y. et al., Computational Materials Science 2020 Vol. 184 Article 109891
Metal-semiconductor nanostructures are key objects for multifunctional electronics and optical design. We report
a new interatomic potential for atomistic simulation of a ternary Si-Au-Al system. The development procedure
was based on the force-matching method that allowed us to create the potential without use of experimental
data at the fitting. Extensive validation including elastic, thermophysical and defect properties
demonstrates a ...
Added: January 28, 2022
T.V. Pavlova, Шевлюга В. М., B.V. Andryushechkin et al., Applied Surface Science 2020 Vol. 509 P. 145235
We report the realization of STM-based lithography with silicon layers removal on the chlorinated Si(100)-2x1 surface at 77K. In contrast to other STM lithography studies, we were able to remove locally both chlorine and silicon atoms. Most of the etched pits have a lateral size of 10-20A and a depth of 1-5A. In the pits in ...
Added: May 18, 2020
Skorokhodov E., Zhidomirov G.M., Eltsov K.N. et al., Journal of Physical Chemistry C 2019 Vol. 123 No. 32 P. 19806-19811
The homoepitaxial growth of Si on Si(100) covered by a resist mask is a necessary technological step for the fabrication of donor-based quantum devices with scanning tunneling microscope lithography. In the present work, the chlorine monolayer is selected as the resist. Using density functional theory, we investigated the adsorption of a single silicon atom on ...
Added: October 25, 2019
Осадчая А. С., Асадчиков В. Е., Бузмаков А. В. et al., В кн. : Труды XXIII Международной конференции "Радиационная физика твердого тела" (Севастополь, 8 июля - 13 июля 2013). : М. : ФГБНУ "НИИ ПМТ", 2013. С. 188-195.
Silicon single crystals were studied by X-ray topo-tomography using laboratory sources. Experimental set up is described. Three-dimensional distribution of defect regions in the crystal were obtained. ...
Added: February 20, 2014
T. V. Pavlova, V. M. Shevlyuga, Journal of Chemical Physics 2023 Vol. 159 No. 21 Article 214701
The interaction of the PBr3 molecule with Si dangling bonds (DBs) on a chlorinated Si(100) surface was studied. The DBs were charged in a scanning tunneling microscope (STM) and then exposed to PBr3 directly in the STM chamber. Uncharged DBs rarely react with molecules. On the contrary, almost all positively charged DBs were filled with molecule fragments. ...
Added: January 29, 2024
Selective Etching of Si, SiGe, Ge and Its Usage for Increasing the Efficiency of Silicon Solar Cells
Baidakova N. A., Verbus V. A., Morozova E. E. et al., Semiconductors 2017 Vol. 51 No. 12 P. 1542-1546
Dependences of the etch rates for KOH and HF:H2O2:CH3COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoislands. In the framework of the proposed approach the Ge(Si) nanoislands serve ...
Added: February 16, 2018
Кондраченко Л. А., Рассадин А. Э., Чистяков А. С., Soviet Technical Physics Letters (English Translation of Pis'ma v Zhurnal Tekhnicheskoi Fiziki) 2005 Vol. 31 No. 2 P. 101-102
A nonlinear phenomenological equation is proposed for the description of shallow (≤1 μm) impurity diffusion in semiconductors and is solved by numerical methods. A comparison to the results of measurements of the diffusion of arsenic in silicon show good agreement between the proposed theory and experiment. ...
Added: December 22, 2022