Дифракция и рассеяние рентгеновских лучей в кристаллах кремния, облученных протонами
The structure of silicon crystals implanted with protons was studied by methods of high-resolution X-ray diffraction . The distribution of strain in the disturbed layers was analyzed.
Silicon single crystals were studied by X-ray topo-tomography using laboratory sources. Experimental set up is described. Three-dimensional distribution of defect regions in the crystal were obtained.
This issue provides abstracts of XIII International Conference «Silicon – 2020» and XII Young Scientists Scholarship participants presentations devoted to the actual problems of silicon electronics and nano-devices. Presentations touch issues of advanced electronic elements, their fabrication processes and the way of application. Beside traditional topics of silicon bulk, surface and interface interaction influence upon semiconductor devices properties the Book presents some novel themes like research and development of neuromorphic networks as a basic part for artificial intelligence systems. Quantum dots models and research for optoelectronics and photonics benefit are presented as well. As a real applications presentation for electronics model generation and automation design system development may be found.
The monitoring methods for measuring the film structure parameters in formation process, namely, the in situ methods, are currently of special significance. Their application provides obtaining the films with the given characteristics, which results in a fast correction of the technological modes. The possibilities of the in situ method of the X-ray reflectometry for defining the parameters of the nanodimensional films during their formation are discussed. The results are given of testing the magnetron deposition of the silicon films and other materials on the silicon substrate.
The influence of heat treatment and deformation on structural changes of Al-based amorphous alloys in the amorphous state and at early stages of crystallization has been studied using the methods of X-ray diffraction, differential scanning calorimetry and transmission electron microscopy. It is shown that isothermal annealing and multiple cold rolling bring about formation of an inhomogeneous amorphous phase with the areas of different chemical composition. The formation of an inhomogeneous amorphous phase accelerates the process of nanocrystallization of Al-based alloys. The conditions of treatment of the amorphous alloy in the amorphous state affect the size and fraction of nanocrystals forming in the amorphous phase upon subsequent heating. The size of nanocrystals in the case of preliminary deformation is smaller than that upon preliminary isothermal annealing. We discuss the reasons for the formation of nanostructures containing smaller nanocrystals in the case of thermal and deformation treatments before the onset of crystallization.
At present particular attention is given to techniques which allow the monitoring of single layer and multilayer thin film materials directly during their formation - in-situ methods. Application of these methods helps to ensure a film with desired characteristics, allowing quickly adjust process conditions. The paper describes the possibilities of the in-situ X-ray reflectivity to determine the parameters of nanoscale films in real time of their formation. Experimental results on the magnetron deposition of nanoscale Si films and other materials on silicon substrates are presented.