Programmable set to monitor charge state change of MIS devices under high-fields

P. 1–3.

Andreev D., Gennady G. Bondarenko, Andreev V., Loskutov S.

In modern microelectronics high fields are an essential condition of devices based on metal-insulator-semiconductor (MIS) structures what is caused by downscaling of nodes of semiconductor manufacturing processes. Under these conditions, a possibility of charge degradation increases what can result in dielectric film breakdown and following integrated circuit (IC) failure. Therefore, a designing of configurable set to monitor charge state change of MIS devices under high fields is a relevant task. In order to implement this, we developed a programmable set which is based on a combined evaluation of the charge state of MIS devices being under electron injection. The set consists of a unit for injection monitoring and a unit to measure C-V curves.In modern microelectronics high fields are an essential condition of devices based on metal-insulator-semiconductor (MIS) structures what is caused by downscaling of nodes of semiconductor manufacturing processes. Under these conditions, a possibility of charge degradation increases what can result in dielectric film breakdown and following integrated circuit (IC) failure. Therefore, a designing of configurable set to monitor charge state change of MIS devices under high fields is a relevant task. In order to implement this, we developed a programmable set which is based on a combined evaluation of the charge state of MIS devices being under electron injection. The set consists of a unit for injection monitoring and a unit to measure C-V curves.

Keywords: MIS structures, high fields, dielectric, структуры "металл-диэлектрик-полупроводник", диэлектрик, сильные поля

In book

Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT)

M.: IEEE, 2022.