Lasers and Zhores Alferov`s heterostructures: past, current, and future
St. Petersburg: IEEE, 2020
21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019
Bristol: IOP Publishing, 2020
The 21st Russian Young Conference on Physics of Semiconductors and Nanostructures, Opto-and Nanoelectronics was held in Saint Petersburg on November 25 – 29, 2019. It was organized by Peter the Great St. Petersburg Polytechnic University. The program of the Conference included semiconductor technology, heterostructures with quantum wells and quantum dots, opto-and nanoelectronic devices and new materials. A ...
Added: October 11, 2021
Влияние конструкции активной области и волновода на характеристики лазеров на основе структур квантовые ямы-точки InGaAs/GaAs
, , et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256-263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Исследование многослойных структур на основе оксида европия совместным анализом рентгеновских методов
, , , В кн.: Научно-техническая конференция студентов, аспирантов и молодых специалистов НИУ ВШЭ им. Е.В. Арменского. Материалы конференции. .: М.: МИЭМ НИУ ВШЭ, 2016.. С. 284-284.
В работе показаны результаты структурных исследований гетерокомпозиций Si/EuO/cap-layer, при помощи совместной обработки результатов рентгеновской дифракции и рефлектометрии. Получены профили распределения компонент поляризуемости для образцов по глубине. ...
Added: June 17, 2016
, , Приборы и техника эксперимента 2010 Т. 53 № 1 С. 159-164
A setup for measuring the temperature dependences of refractive indices n(T) of semiconductors and dielectrics in the temperature range 300–700 K at the wavelengths of a He–Ne laser л = 0.63, 1.15, and 3.39 µm is described. Samples in the form of plane–parallel plates serve as Fabry–Perot etalons the optical thickness of which depends on ...
Added: April 23, 2012
, , et al., Science 2019 Vol. 365 No. 6451 P. 360-366
Photoexcited electron-hole pairs on a semiconductor surface can engage in redox reactions with two different substrates. Similar to conventional electrosynthesis, the primary redox intermediates afford only separate oxidized and reduced products or, more rarely, combine to one addition product. Here, we report that a stable organic semiconductor material, mesoporous graphitic carbon nitride (mpg-CN), can act ...
Added: October 5, 2020
, , et al., Applied Sciences (Switzerland) 2020 Vol. 10 No. 3 Article 1038
We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase epitaxial deposition of 4–16 monolayers of InxGa1−xAs of moderate indium composition (0.3 < x < 0.5) on GaAs substrates and represent dense arrays ...
Added: September 30, 2020
Bromobismuthates of 1,1'-(1,N-Alkanediyl)bis(picolines): Synthesis, Thermal Stability, Crystal Structures, and Optical Properties
, , et al., Russian Journal of Coordination Chemistry/Koordinatsionnaya Khimiya 2020 Vol. 46 No. 2 P. 111-118
Abstract—Hybrid bromobismuthates of N-alkylated derivatives of 2- and 3-methylpyridine, (C15H20N2)2Bi2Br10 (I), (C17H24N2)2Bi2Br10 (II), (C18H26N2)3(Bi2Br9)2 (III), (C14H18N2)(H3O)BiBr6 ∙ 2H2O (IV), (C14H18N2)2BiBr6IBr2 (V), (C16H22N2)3(Bi2Br9)2 (VI), and (C18H26N2)3(Bi2Br9)2 (VII), are synthesized in concentrated HBr and characterized by physicochemical methods. The structures of complexes I–VII are studied by X-ray structure analysis (CIF files CCDC nos. 1946844–1946850). Complexes I and ...
Added: January 23, 2020
Washington: SPIE, 2021
Proceedings of the SPIE Optics + Optoelectronics conference on Integrated Optics: Design, Devices, Systems and Applications VI, 19–23 April 2021 Online Only, Czech Republic. Proc. SPIE volume 11775. ...
Added: August 30, 2021
, , et al., Applied Physics Letters 2021 Vol. 118 Article 032105
In this paper, we argue that the electron skew scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint, allowing us to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads ...
Added: October 21, 2021
, Nature Photonics 2019 Vol. 13 No. 10 P. 657-659
Father of the semiconductor laser, Nobel Prize laureate and director of the Ioffe Institute in St Petersburg, Zhores Alferov was a much-loved scientist and educator whose research changed the modern world. ...
Added: February 19, 2021
, , , Journal of Physics: Condensed Matter 2021 Vol. 33 No. 16 Article 165301
The flow of electric current in quantum well breaks the space inversion symmetry, which leads to the dependence of the radiation transmission on the relative orientation of current and photon wave vector, this phenomenon can be named current drag of photons. We have developed a microscopic theory of such an effect for intersubband transitions in ...
Added: October 8, 2021
, , et al., , in: First AfLS Conference and Workshop 2015. Book of abstracts. .: [б.и.], 2015.. P. 23-23.
A complementary approach for studying multilayer heterostructes with X-Ray investigation methods was represented. Approach examination was conducted by analysis XRR and HRXRD data for the δ-Mn/InGaAs/GaAs heterostructure and series of XRR experiments with a different wavelengths for the Fe/Cr/Gd/Cr superlattice. ...
Added: June 17, 2016
Особенности вольт-амперной характеристики микродисковых лазеров на основе квантовых ям-точек InGaAs/GaAs
, , et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
, , et al., В кн.: Труды XXVIII Международной конференции «Радиационная физика твердого тела» (Севастополь, 09 июля – 14 июля 2018г.), под ред. Г.Г. Бондаренко. М., ФГБНУ НИИ ПМТ, 2018, 502 с.. .: ФГБНУ "НИИ ПМТ", 2018.. С. 70-77.
В работе предложен способ определения режима получения одномерных гетероструктур методом матричного синтеза. Получены нанопроволоки из чередующихся слоёв меди и никеля и проведено исследование их структуры методами просвечивающей и растровой электронной микроскопии, а также рентгеноструктурного анализа. ...
Added: September 8, 2018
The Book of Abstracts contains the abstracts of the papers presented at the biannual International Conference “Micro- and Nanoelectronics – 2018” (ICMNE-2018) including the extended Session “Quantum Informatics” (QI-2018). The Conference topics cover the most of the areas dedicated to the physics of integrated micro- and nanoelectronic devices and related micro- and nanotechnologies. The Conference is focused on recent ...
Added: October 22, 2018
, , et al., Physica Status Solidi - Rapid Research Letters 2016 Vol. 10 No. 4 P. 320-323
We report the study of transport and magnetic properties of the YbB6–δ single crystals grown by inductive zone melting. A strong disparity in the low temperature resistivity, Seebeck and Hall coefficients is established for the samples with the different level of boron deficiency. The effective parameters of the charge transport in YbB6–δ are shown to ...
Added: February 25, 2017
Development of theoretical and experimental approaches for determination of real structure parameters of multilayered heterosystems
, , et al., , in: XTOP 2014, Book of abstract. 12th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging, 14 - 19 september 2014. .: [б.и.], 2014.. P. 186-186.
In this work authors presented new approach to investigation of multilayer heterostructures by joint calculation HRXRD and XRR data. ...
Added: December 25, 2014
, , et al., JETP Letters 2018 Vol. 108 No. 6 P. 419-422
The spin polarization features of an electron system and the relaxation of nonequilibrium spin excitations near an even-denominator fractional state of 3/2 in a two-dimensional electron system based on the GaAs/AlGaAs heterostructure are experimentally investigated. It is shown that the 3/2 state is a singular point in the filling factor dependence of the spin ordering ...
Added: November 30, 2018
Контроль структуры новых функциональных многослойных наноразмерных материалов комплементарными методами
, , et al., В кн.: Нанотехнологии функциональных материалов (НФМ’14): Труды международной научно-технической конференции. .: СПб.: Издательство Санкт-Петербургского политехнического университета, 2014.. С. 423-423.
В статье приводится исследование структур различных новых функциональных материалов, таких как эпитаксиальные слои оксида европия на кремнии или гетероструктуры на основе твердых растворов вида InP/AlGaAs/InAs/InGaAs/InAlAs при помощи методов высокоразрешающей рентгеновской дифракции и рентгеновской рефлектометрии. Полученные этими методиками результаты показали хорошее согласование как друг с другом, так и с другими методами изучения структурного совершенства материалов, такими как ...
Added: December 25, 2014
, , et al., Physical Review X 2018 Vol. 8 P. 031021-1-031021-8
Manifestations of quantum interference effects in macroscopic objects are rare. Weak localization is one of the few examples of such effects showing up in the electron transport through solid state. Here, we show that weak localization becomes prominent also in optical spectroscopy via detection of the electron spin dynamics. In particular, we find that weak localization controls the ...
Added: September 10, 2018
, , et al., Journal of Applied Physics 2019 Vol. 126 No. 17 Article 175702
The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was experimentally studied under interband optical excitation of nonequilibrium charge carriers. The structures doped only with donors, and the structures with a high degree of compensation of donors by acceptors were studied. The spectra of terahertz radiation associated with charge carrier transitions with ...
Added: October 15, 2021
Фотоэмиссия свободных носителей заряда в высокоомный полупроводник при освещении омических контактов
, , et al., В кн.: Вакуумная наука и техника: Материалы ХХ юбилейной научно-технической конференции. .: М.: МИЭМ НИУ ВШЭ, 2013.. С. 220-222.
The photoemission of free charge carriers into high-ohmic semiconductor created by light illumination of near-contact-area of ohmic contacts to cadmium telluride sample was investigated. It was revealed, that near-contact-area light illumination influences both on contact transition resistance and on volume conductivity of the crystal due to increasing of main charge carrier concentration. The method of ...
Added: October 11, 2013
, , et al., Physical Review Letters 2018 Vol. 121 No. 5 P. 057402
Atomically thin semiconductors provide an ideal testbed to investigate the physics of Coulomb-bound many-body states. We shed light on the intricate structure of such complexes by studying the magnetic-field-induced splitting of biexcitons in monolayer WS2 using polarization-resolved photoluminescence spectroscopy in out-of-plane magnetic fields up to 30 T. The observed g factor of the biexciton amounts to about −3.9, closely matching the g factor ...
Added: November 12, 2020
, , , Physical Review B: Condensed Matter and Materials Physics 2017 Vol. 96 P. 235401-1-235401-8
We perform a magneto-optical study of a two-dimensional electron systems in the regime of the Stoner ferromagnetic instability for even quantum Hall filling factors on MgxZn1−xO/ZnO heterostructures. Under conditions of Landau-level crossing, caused by enhanced spin susceptibility in combination with the tilting of the magnetic field, the transition between two rivaling phases, paramagnetic and ferromagnetic, is traced in ...
Added: December 19, 2017