TCAD моделирование сбоеустойчивости SELBOX и DSOI КМОП КНИ ячеек памяти

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TCAD моделирование сбоеустойчивости SELBOX и DSOI КМОП КНИ ячеек памяти

С. 227–229.

A mixed TCAD-SPICE simulation of the heavy ion impact into a SRAM on SOI CMOS transistors was carried out. The dependence of the threshold LET on temperature was investigated for three configurations of 0.24 μm SOI MOSFET: traditional SOI, Selective BOX and Double SOI. The radiation hardness of SRAM on Double SOI MOSFETs is significantly improved by applying a negative bias to the additional silicone layer has been shown.

Language: Russian

DOI

In book

Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.

М.: МАКС Пресс, 2020.

The Study and Determination of Rational Hydraulic Parameters of a Prototype Multi-Gear Pump

Zharkevich O., Berg A., Reshetnikova O. et al., Fluids 2025 Vol. 10 No. 8 Article 211

This article presents a comprehensive experimental and theoretical study and substantiation of the hydraulic parameters of a prototype multi-gear pump. The proposed pump design, which features one drive gear and four driven gears, aims to address the common disadvantages of traditional gear pumps, including radial force imbalance, uneven flow, high acoustic noise, and increased fluid ...

Added: November 6, 2025

How tolerant are hydroids to cimate-change-induced acute spikes in sea water temperature? A case study of arctic Dynamena pumila (L., 1758)

Marfenin N., Vitaly S. Dementyev, Nikolaev E., Hydrobiology (ISSN 2673-9917) Hydrobiology Editorial Office hydrobiology@mdpi.com MDPI, St. Alban-Anlage 66 4052 Basel, Switzerland Tel: +41 61 683 77 34 www.mdpi.com mdpi.com/journal/hydrobiolog 2023 Vol. 2 No. 4 P. 583–601

The temperature of the water surface layer in the Arctic may increase significantly in the coming decades. To what extent will shallow-water fauna be affected by warming? We investigated this issue using an example of one species of colonial hydroid, Dynamena pumila. We judged its reaction to warming via its pulsation activity and the growth ...

Added: December 6, 2023

Выносливость колониального организма к повышению температуры среды в зависимости от его размеров на примере колониального гидроида Dynamena pumila (L., 1758)

Марфенин Н. Н., Dementyev V., Николаев Е. В., Russian Journal of Ecosystem Ecology 2023 Т. 8 № 3

It has been experimentally established that larger colonies of Dynamena pumila (Hydrozoa, Cnidaria) grown in the laboratory, including 10–11 young shoots, are less resistant to increases in water temperature to the upper temperature limit of this species (25 °C) than the same smaller colonies with one or two shoots. As the temperature rises, some of ...

Added: December 6, 2023

Исследование возможностей применения различных промышленных экстракторов для определения параметров SPICE-моделей субмикронных МОПТ в диапазоне температуры до 300°С

Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 117–120.

The possibilities of determining the SPICE model parameters in an extended temperature range were investigated using the three most common commercial extractors IC-CAP, MBP and BSIMProPlus. Comparative estimates of the efficiency of extractors are given on the example of calculating MOSFETs I–V characteristic taking into account the temperatures up to +300°C. ...

Added: November 5, 2021

Dependence of Temperature and Back-Gate Bias on Single-Event Upset Induced by Heavy Ion in 0.2-μm DSOI CMOS Technology

Wang Y., Liu F., Li B. et al., IEEE Transactions on Nuclear Science 2021 Vol. 68 No. 8 P. 1660–1667

The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- μm double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a DSOI static random access memory (SRAM). The physical mechanism of single-event effect ...

Added: September 26, 2021

Методика определения параметров SPICE-моделей для анализа влияния ОЯЧ на КМОП-схемы при уменьшении размеров транзисторов

Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379–385

The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...

Added: April 16, 2021

TCAD-SPICE Investigation of SEU Sensitivity for SOI and DSOI CMOS SRAM Cells in Temperature Range up to 300 °C

Petrosyants K., D.A. Popov, Li B. et al., , in: Proceedings of the 3nd International Conference on Microelectronic Devices and Technologies (MicDAT 2020).: Barcelona: International Frequency Sensor Association (IFSA), 2020. Ch. 15 P. 31–34.

The simulation results received by mixed TCAD-SPICE modeling for linear energy transfer (LET), transient characteristics of voltages and currents in 0.24 um SRAM cells with SOI, DSOI and SELBOX structures in temperature range up to 300 °C were analyzed. It was shown that the fault tolerance of CMOS SOI SRAM cells can be increased when ...

Added: March 23, 2021

TCAD and SPICE Models for Account of Radiation Effects in Nanoscale MOSFET Structures

K. O. Petrosyants, D. A. Popov, M. R. Ismail-Zade et al., , in: Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС-2020).Вып. 4.: ИППМ РАН, 2020. P. 2–8.

Two types of the MOSFET models available in commercial versions of TCAD and SPICE simulators are completed with additional equations taking into account radiation effects. The adequacy of the models is demonstrated on two examples 1) 0.2 um and 0.24 um SOI/DSOI MOSFETs considering TID effects and single heavy ion impact, and 2) 28 nm bulk MOSFET, 45 nm and 28 nm ...

Added: December 5, 2020

SPICE-модели JFET и MOSFET в широком диапазоне температур

Ismail-zade M. R., Известия высших учебных заведений. Электроника 2020 Т. 25 № 1 С. 40–47

The circuit design of electronic devices for harsh operating conditions requires SPICE models of electronic components that take into account the influence of ultra-low and ultra-high ambient temperatures. However, the standard SPICE models of electronics component, available in commercial versions of SPICE-like simulators, provide an adequate accuracy in a limited temperature range (-60 … +150 ...

Added: October 30, 2019

SPICE-модели JFET и MOSFET в широком диапазоне температуры (–200…+300°C)

Ismail-zade M. R., В кн.: Международный форум «Микроэлектроника-2019». Школа молодых ученых. Сборник тезисов. Республика Крым, 23-25 сентября 2019 г.: М.: ООО "Спектр", 2019. С. 284–292.

The compact SPICE models of MOSFET and JFET field-effect transistors for the temperature range from ultra-low to ultra-high (–200...+300°C) have been improved. The procedure for extracting the SPICE model parameters based on the measurement results or TCAD simulation of a standard set of I-V and C-V characteristics in a wide temperature range has been developed. ...

Added: September 30, 2019

Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI’s Components using RAD-THERM TCAD Subsystem

Petrosyants K. O., Kozhukhov M., Popov D., , in: 2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS).: Cluj: IEEE, 2019. P. 1–4.

A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled ...

Added: May 31, 2019