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Излучающие структуры для кремниевой фотоники на основе растянутых Ge микроструктур

С. 410–410.
Алёшкин В. Я., Байдакова Н. А., Verbus V. A., Машин А. И., Морозова Е. Е., Нежданов Е. Е., Новиков А. В., Скороходов Е. В., Шенгуров Д. В., Юрасов Д. В., Яблонский А. Н.

One way to increase the efficiency of radiation sources for Ge photonics based on Ge is to stretch it, which allows you to transform Ge into a direct-gap semiconductor. However, the high deformation values ​​necessary for this (biaxial 1.5–1.8% or uniaxial 4.5–5%) for sufficiently thick Ge layers can be realized only locally, using various methods. The paper presents the results of the formation of stress-strain methods of uniaxially stretched Ge microstructures (“microbridges”) of various designs and the study of their radiative properties.

Language: Russian
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Keywords: Ge microbridgesGe микромостикиtensile strainдеформация растяжения

In book

Тезисы докладов XIV Российской конференции по физике полупроводников «ПОЛУПРОВОДНИКИ-2019», 9-13 сентября 2019 г., Новосибирск
Т. 2. , Издательство "Перо", 2019.
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