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Regular version of the site

Book chapter

Investigation of Electrostatic Discharge Effect on High-power Mosfet-Transistors Considering the Influence of PCB

P. 1-4.
Konstantinov, U.A.,, Pozhidaev, E.D., Tumkovskiy S.R.

Computer simulations of electrostatic discharges (ESD) effect on high-power MOSFET-transistors with built-in 
protection  have  been  carried  out.  It  was  found  that  the transistors with low gate-source capacitance are more sensitive to the ESD effect.The  dependence  between  printed  circuit  board  (PCB) 
capacity,  causing  breakdown  of  MOSFET-transistor  gate dielectric, and ESD voltage was established. 
It  is  shown  that  for  transistor  haying  low  gate-source capacitance,  the  existence  of  the  built-in  protection  does  not prevent gate dielectric breakdown at electrostatic discharges.  It is recommended to provide external ESD protection for high-power  MOSFET-transistors  with  built-in  protection having low gate-source capacitance, for example, having turned on the ESD protection diode in the electric circuit.