SPICE-модели полевых транзисторов со структурой MOSFET и JFET для расширенного диапазона температуры до –200°C

С. 111–117.

Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., Kharitonov I. A.

A set of modified compact spice models of field effect transistors is presented: with isolated gate (MOSFET) and with pn junction control (JFET) for circuit simulation in a temperature range of -200°C, which is important for space applications. All models are constructed using the approach combining macromodeling based on the standard models available in the library of spice models and introducing approximating dependencies for the temperature-dependent parameters of the model. For all models of the complex, a unified automated procedure for extraction of parameters has been worked out, providing an acceptable accuracy of electrical and temperature effects accounting for practical applications in the temperature range from room temperature to -200°C.

Keywords: model parameter extraction, полевые транзисторы, МОП-транзисторы, MOSFETs, экстракция параметров модели, compact SPICE models, компактные SPICE-модели, JFETs, field-effect transistors, temperature influence, extreme operating conditions, JFET-транзисторы, температурное воздействие, экстремальные условия работы

In book

Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС-2018)

Вып. 3. , М., Зеленоград: ИППМ РАН, 2018.