The methodology and software tools for multi-level thermal and electro-thermal design of electronic components is presented. The discussion covers 2D/3D constructions of: 1) discrete and integrated semiconductor devices; 2) monolithic and hybrid ICs; 3) MCMs and PCBs. The actual test validation through thermal measurement is demonstrated for all types of components.
This payment is made in accordance to the state educational standards and training program in the discipline "Physiology" basic educational programs direction 032100 "Physical Culture". The manual presents the modern studies of the functional state of the organism in terms of high and low atmospheric pressure, and high and low ambient temperatures. The manual is intended for students, teachers, coaches.
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.
The effects of neutron irradiation on both Si bipolar junction transistor (BJT) and SiGe heterojunction transistor (HBT) are investigated using Synopsys TCAD tool. The carrier lifetime degradation under irradiation models are included in the program. For SiGe HBT at fluences as high as 10**15 cm-2 the degradation of peak current gain is less than 40%, and the device maintains a peak current gain of 80 100 after 10**15 cm-2. The simulation results are in good agreement with experimental data.