Модели полупроводниковых приборов для проектирования БИС космического назначения
System for thermal design on chip- and board-level of electronic components is introduced. It is integrated with Mentor Graphics CAD and consists of three subsystems: thermal design in IC Station; thermal design in Expedition PCB; thermal measurement for verification of temperature modeling results.
The effects of neutron irradiation on both Si bipolar junction transistor (BJT) and SiGe heterojunction transistor (HBT) are investigated using Synopsys TCAD tool. The carrier lifetime degradation under irradiation models are included in the program. For SiGe HBT at fluences as high as 10**15 cm-2 the degradation of peak current gain is less than 40%, and the device maintains a peak current gain of 80 100 after 10**15 cm-2. The simulation results are in good agreement with experimental data.
An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies of parameters VTO, GAMMA, KP, E0 are introduced and 2) additional circuit elements to account for floating-body effects and radiation-induced leakage currents under static and dynamic radiation influence are connected. Maximum simulation error is 5–7% in the dose range up to 1 Mrad. It is shown that EKV-RAD spends less CPU time by 15–30% for analog and 40–50% for digital SOI/SOS CMOS circuits simulations compared to BSIMSOI-RAD model.
The automatic electro-thermal simulation has been implemented in Mentor Graphics PCB Design Flow. New program-dispatcher TransPower has been developed to control the electro-thermal calculation process, combining the programs of the electric (Analog Designer) and thermal (BETAsoft) simulation into a single cycle. As a result, the labor consumption and the PCB electro-thermal simulation time have been significantly reduced, the accuracy and reliability of calculations have been improved and the human errors have been eliminated.