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September 25, 2026
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Research conducted by economists at HSE University has revealed a significant correlation between the regular use of GenAI in the workplace and higher pay among Russian employees. The study found that individuals who frequently use GenAI in their professional activities earn notably more than those who reject these new tools or resort to them occasionally. The salary premium for highly qualified specialists reaches 41.8%. The article was published in the Voprosy Ekonomiki journal.
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Fault Simulation in Radiation-Hardened SOI CMOS VLSIs using Universal Compact MOSFET Model

P. 117–122.
Petrosyants K. O., Sambursky L. M., Kharitonov I. A., Lvov B. G.

The methodology of modeling and simulation of environmentally induced faults in radiation hardened SOI CMOS ICs is presented. For this purpose, the universal compact SPICE SOI MOSFET model with account for TID, dose rate and single event effects is used. First, the model parameters extraction procedure is described in more details taking into consideration radiation effects and peculiarities of novel radiation-har­dened (RH) SOI MOS structures. The results of analog and digital SOI CMOS circuits simulation show the difference with experimental data not more than 10‒20% for all types of radiation.

Language: English
Full text
DOI
Keywords: radiation hardnessmodel parameter extractionmodelSOI CMOS circuitfault modelingdose rate
Publication based on the results of:
Моделирование воздействия тепловых и радиационных эффектов на микроэлектронные компоненты (2015)

In book

Proceedings of the IEEE Latin-American Test Symposium (LATS-2016)
Proceedings of the IEEE Latin-American Test Symposium (LATS-2016)
NY: The Institute of Electrical and Electronics Engineering, Inc., 2016.
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