Fault Simulation in Radiation-Hardened SOI CMOS VLSIs using Universal Compact MOSFET Model
The methodology of modeling and simulation of environmentally induced faults in radiation hardened SOI CMOS ICs is presented. For this purpose, the universal compact SPICE SOI MOSFET model with account for TID, dose rate and single event effects is used. First, the model parameters extraction procedure is described in more details taking into consideration radiation effects and peculiarities of novel radiation-hardened (RH) SOI MOS structures. The results of analog and digital SOI CMOS circuits simulation show the difference with experimental data not more than 10‒20% for all types of radiation.
This article considers the model of metaphorical transfer of names of natural (atmospheric) phenomena. The worn inner form of many metaphors needs to consult the diachronic aspect, which allowes us to determine the conceptual transfer vector - the emotional attitude of speakers to natural phenomena, deterministic fear of them, faith in their supernatural origin.
The search for new models - an important component of social and economic development of the country under the prevailing circumstances. To improve the efficiency of logistics system optimization-qualimetric proposed model for quality assurance of deliveries of production, considered in the context of economic uncertainty interaction between providers and consumers. The monograph analyzes legal issues of accounting organization participants of capital construction, formulated suggestions and recommendations for improving the system of accounting of funds raised in the course of construction. The book will be of interest to the scientific community, civil servants, employees of the administrative-territorial entities, as well as university professors, graduate students and undergraduate students.
An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies of parameters VTO, GAMMA, KP, E0 are introduced and 2) additional circuit elements to account for floating-body effects and radiation-induced leakage currents under static and dynamic radiation influence are connected. Maximum simulation error is 5–7% in the dose range up to 1 Mrad. It is shown that EKV-RAD spends less CPU time by 15–30% for analog and 40–50% for digital SOI/SOS CMOS circuits simulations compared to BSIMSOI-RAD model.
In article techniques of modeling of radio-electronic equipment in subsystems of ASONIKA-M and АSONIKА-М-IGS are considered, and also the method of increase of reliability of bearing constructions of radio-electronic equipment is described. Examples are resulted.