Quasi –3D Electrical and Thermal Modeling of Microelectronic Semiconductor Devices
New quasi – 3D numerical model for electrical and thermal analysis of microelectronic semiconductor devices is presented. The general 3D heat transfer and electrical field problems are correctly transformed to the set of 2D equations for temperature and electrical potential distributions in different layers of the device. The complexity and CPU time of the electro-thermal analysis are many times reduced. The results of different devices electro-thermal modeling for different types of semiconductor devices and ICs are presented.