The behaviour and erosion of tungsten, copper and W-Cu composition under irradiation by high intensive hydrogen plasma have been investigated. The erosion coefficients of these materials have been determined. The importance of copper redepositions in the mechanism of sputtering and erosion of W-Cu composition has been emphasised.
The sputtering of a number of materials due to an intense polyenergetic flux of hydrogen particles has been investigated. The irradiation of pure tungsten, copper, aluminium, titanium, aluminium-lithium alloys, stainless steel and tungsten-copper composition has been carried out at particle flux densities of 1017-1018 cm~2 s~' and at fluences of 1020-1022 cm~2. Furthermore, W-Cu composition has been subjected to the effect of high-current plasma pulses for simulating the disruption heat loads in a thermonuclear reactor.
We investigate the diffusion of phosphorus in thermal SiO2 films of MIS structure and influence of the process on charge effects in gate dielectric and at interfaces in Fowler–Nordheim high-field tunnel injection of electrons. One rates the cross sections of electron traps in a phosphosilicate glass (PSG) film. We show that the density of electron traps increases with increasing the PSG film thickness. The ability of using a negative charge has been established. It is accumulated in the PSG film of MIS structures with double-layer SiO2–PSG gate dielectric during high-field tunnel injection of electrons, to modify MIS devices. It is shown that the use of a double-layer SiO2–PSG gate dielectric with concentration of phosphorus in PSG film of 0.4–0.9% allows one to increase the average amount of charge injected into a dielectric until breakdown and decrease the amount of defective structures with a low amount of charge injected into the dielectric before breakdown.