The behaviour and erosion of tungsten, copper and W-Cu composition under irradiation by high intensive hydrogen plasma have been investigated. The erosion coefficients of these materials have been determined. The importance of copper redepositions in the mechanism of sputtering and erosion of W-Cu composition has been emphasised.
The characteristics modification of the MOS devices with thermal silicon dioxide, passivated by phosphorus-silicate glass (PSG) layer by Fowler-Nordheim (FN) tunneling electron injection in high-fields is studied. The DC high-field tunneling injection from silicon and metal was used for charge state modification of MOS structure gate dielectric. The parameters characterizing the charge state change of MOS structures during modification had been monitored using time dependence of voltage change VI applied to a sample during the injection. It was found out that the range of threshold voltage changes of MOS devices after electron injection could reach values up to 6 V. The range increases with growth of phosphorus concentration in PSG layer. However, the value of the injected charge has to be less than 0.1 mC/cm2 during the adjustment of the threshold voltage in order to provide acceptable values of surface state density.
The sputtering of a number of materials due to an intense polyenergetic flux of hydrogen particles has been investigated. The irradiation of pure tungsten, copper, aluminium, titanium, aluminium-lithium alloys, stainless steel and tungsten-copper composition has been carried out at particle flux densities of 1017-1018 cm~2 s~' and at fluences of 1020-1022 cm~2. Furthermore, W-Cu composition has been subjected to the effect of high-current plasma pulses for simulating the disruption heat loads in a thermonuclear reactor.