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Regular version of the site

Book chapter

Применение метода РОР для определения профиля распределения и элементного состава пленок, напыленных на установке плазменный фокус

С. 166-166.
Ерискин А. А., Бондаренко Г. Г., Колокольцев В. Н., Куликаускас В. С., Силин П. В., Никулин В. Я.

The method of Rutherford backscattering of He + ions 2 MeV studied profiles of C, Cu and W in the films deposited on the PF-4 LPI. The films were deposited on glass substrates in gases Ar, D2. It is found that the profiles of the elements is significantly dependent on the kinetic energy of the particles and their sizes. At particle velocities ~ 100 km / s, the particles penetrate to a depth of ~ 500 nm. Profiles are inhomogeneous in nature. For each impurity, there are certain depth beneath the surface layers of the glass.   A special feature is the location of the films produced impurity layers below the surface of the glass substrate and overlapping. This arrangement sputtered layers is significantly different from the traditionally used methods of film deposition.

In book

Edited by: Ю. Ермаков, В. С. Куликаускас, Е. Машкова и др. Университетская книга, 2015.