Контроль параметров наноразмерных пленок в реальном времени их формирования
Method of in-situ X-ray reflectivity is presented. The results of investigation of titanium and silicon thin films in real-time of their deposition on silicon substrates are discussed.
This edition presents abstracts of the reports of the Meeting and Youth Conference on Neutron Scattering and Synchrotron Radiationin Condensed Matte (NSSR-CM-2014)r
The charge state change of MOS structures with multilayer dielectric films SiO2–PSG under highfield injection modification at different temperatures is studied in this article. The effect of temperature on the thermal stability of the negative charge component used to adjust the threshold voltage of MOS transistors is investigated. It is found that the performance of the highfield injection modification of MOS structures in the mode of constant current at elevated temperatures increases not only the density of the trapped negative charge but also its thermally stable component.
Main regularities of the influence of the air adsorbate on the interpretation of images of thin metal films were experimentally determined in the scanning tunneling microscopy (STM). Modification of the surface relief of a thin film of Pt was made in air.Effect of formation of surface structures of 50-100 nm, a cluster of polarized adsorbate molecules by a strong electric field in the electrode gap, was defined. Tunnel voltage and current threshold values of irreversible relief changes was obtained. Technique of local adsorbate removal from the test surface area was developed by pulse contactless interaction of STM electrodes.