МАТЕРИАЛОВЕДЕНИЕ 2-е изд. Учебник для бакалавров
A method based on the spectral analysis of thermowave oscillations formed under the effect of radiation of lasers operated in a periodic pulsed mode is developed for investigating the state of the interface of multilayered systems. The method is based on high sensitivity of the shape of the oscillating component of the pyrometric signal to adhesion characteristics of the phase interface. The shape of the signal is quantitatively estimated using the correlation coefficient (for a film–interface system) and the transfer function (for multilayered specimens).
The structure of silicon crystals implanted with protons was studied by methods of high-resolution X-ray diffraction . The distribution of strain in the disturbed layers was analyzed.
Size-dependent quantization of energy spectrum of conducting electrons in solids leads to oscillating dependence of electronic properties on corresponding dimension(s) . In conventional metals with typical energy Fermi EF~1 eV and the charge carrier's effective masses m* of the order of free electron mass m0, the quantum size phenomena provide noticeable impact only at nanometer scales. Here we experimentally demonstrate that in single-crystalline semimetal bismuth nanostructures the electronic conductivity non-monotonously decreases with reduction of the effective diameter (Fig.1). In samples grown along the particular crystallographic orientation the electronic conductivity abruptly increases at scales of about 50 nm due to metal-to-insulator transition mediated by the quantum confinement effect. The experimental findings are in reasonable agreement with theory predictions. The quantum-size phenomena should be taken into consideration to optimize operation of the next generation of ultrasmall quantum nanoelectronic circuits.
By using superconducting quantum interference device (SQUID) magnetometry, we investigated anisotropic high-field (H less than or similar to 7T) low-temperature (10 K) magnetization response of inhomogeneous nanoisland FeNi films grown by rf sputtering deposition on Sitall (TiO2) glass substrates. In the grown FeNi films, the FeNi layer nominal thickness varied from 0.6 to 2.5 nm, across the percolation transition at the d(c) similar or equal to 1.8 nm. We discovered that, beyond conventional spin-magnetism of Fe21Ni79 permalloy, the extracted out-of-plane magnetization response of the nanoisland FeNi films is not saturated in the range of investigated magnetic fields and exhibits paramagnetic-like behavior. We found that the anomalous out-of-plane magnetization response exhibits an escalating slope with increase in the nominal film thickness from 0.6 to 1.1 nm, however, it decreases with further increase in the film thickness, and then practically vanishes on approaching the FeNi film percolation threshold. At the same time, the in-plane response demonstrates saturation behavior above 1.5-2T, competing with anomalously large diamagnetic-like response, which becomes pronounced at high magnetic fields. It is possible that the supported-metal interaction leads to the creation of a thin charge-transfer (CT) layer and a Schottky barrier at the FeNi film/Sitall (TiO2) interface. Then, in the system with nanoscale circular domains, the observed anomalous paramagnetic-like magnetization response can be associated with a large orbital moment of the localized electrons. In addition, the inhomogeneous nanoisland FeNi films can possess spontaneous ordering of toroidal moments, which can be either of orbital or spin origin. The system with toroidal inhomogeneity can lead to anomalously strong diamagnetic-like response. The observed magnetization response is determined by the interplay between the paramagnetic-and diamagnetic-like contributions.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.