Improvement of thermal resistance in InGaAs/GaAs/AlGaAs microdisk lasers bonded onto silicon
Semiconductor Science and Technology. 2022. Vol. 37. No. 7. Article 075010.
F I Zubov, E I Moiseev, A M Nadtochiy, N A Fominykh, K A Ivanov, I S Makhov, A S Dragunova, M V Maximov, N A Kryzhanovskaya, A E Zhukov
Epi-side down bonding on a silicon substrate of AlGaAs/GaAs microdisk lasers is presented. A heterostructure with coupled large optical cavities enables location of an InGaAs quantum dot active region at a distance of ∼1 µm from the heterostructure surface. The thermal resistance was reduced to 0.2 and 0.1 K/mW for disks of 30 and 50 µm in diameter, respectively. The maximum continuous-wave power limited by the thermal rollover is more than doubled after bonding.
Research target: Physics Nanotechnologies
, , et al., IEEE Journal of Quantum Electronics 2023 Vol. 59 No. 1 Article 2000108
We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active region. In particular, we study the effect of microlaser diameter D variation from 15 to 200 μm on optical losses of different nature. A strong dependence of the lasing wavelength on the diameter is observed: the blue-shift with decreasing ...
Added: January 26, 2023
, , et al., Физика и техника полупроводников 2022 Т. 56 № 9 С. 922-927
The internal loss at the lasing threshold were studied experimentally and numerically in laser cavities comprising dense arrays of InGaAs/GaAs quantum dots (quantum well-dots) as a function of the number of their planes and the output loss. Numerical values of the parameters were found that determine the free-carrier absorption in the active region and in the waveguiding layer. The optimal design ...
Added: October 3, 2022
, , et al., Nanomaterials 2023 Vol. 13 No. 5 Article 877
One-state and two-state lasing is investigated experimentally and through numerical simulation as a function of temperature in microdisk lasers with Stranski–Krastanow InAs/InGaAs/GaAs quantum dots. Near room temperature, the temperature-induced increment of the ground-state threshold current density is relatively weak and can be described by a characteristic temperature of about 150 K. At elevated temperatures, a faster (super-exponential) increase in ...
Added: April 25, 2023
Dynamic characteristics and noise modelling of directly modulated quantum well-dots microdisk lasers on silicon
, , et al., Laser Physics Letters 2022 Vol. 19 No. 2 Article 025801
The small-signal amplitude modulation, threshold, and spectral characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots active region were studied jointly with the spectral and threshold parameters of edge-emitting lasers made from the same epitaxial heterostructure. Using the obtained material parameters, the relative intensity noise of the microdisk lasers was calculated as a function of the ...
Added: February 28, 2022
Конструкции блокирующих слоев для подавления паразитной рекомбинации в мощных диодных лазерах с GaAs волноводом
, , et al., Физика и техника полупроводников 2022 Т. 56 № 3 С. 363-369
Using numerical simulation, the search for designs of asymmetric barrier layers (ABLs) in a laser diode with a GaAs waveguide emitting at a wavelength of λ = 980 nm is carried out. A pair of ABLs adjoining the active region on both sides blocks undesired charge-carrier flows and suppresses parasitic spontaneous recombination in the waveguide layers. Optimal designs ...
Added: August 11, 2022
Лазерная генерация перенесенных на кремний инжекционных микродисков с квантовыми точками InAs/InGaAs/GaAs
, , et al., Письма в Журнал технической физики 2020 Т. 46 № 16 С. 3-6
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, ...
Added: August 25, 2020
, , et al., Laser Physics Letters 2022 Vol. 19 No. 1 Article 016201
Characteristics of a compact III–V optocoupler heterogeneously integrated on a silicon substrate and formed by a 31 μm in diameter microdisk (MD) laser with a closely-spaced 50 μm × 200 μm waveguide photodetector are presented. Both optoelectronic devices were fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers. The measured dark current density of the photodetector was as ...
Added: December 2, 2021
, , et al., Optics Letters 2021 Vol. 46 No. 16 P. 3853-3856
We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former’s bonding results in a decrease in thermal resistance by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31) m, attributed to a thinner ...
Added: August 30, 2021
Измерение температуры горячей зоны методом 1f модуляционной диодной лазерной абсорбционной спектроскопии с логарифмическим преобразованием сигнала
, , et al., Квантовая электроника 2022 Т. 52 № 9 С. 831-837
Разработан новый вариант метода диодной лазерной абсорбционной спектроскопии (ДЛАС) для определения температуры горячих зон. Метод основан на комбинации медленного сканирования частоты излучения зондирующего диодного лазера в окрестности линии поглощения тестовой молекулы среды и быстрой модуляции частоты излучения с амплитудой порядка ширины линии поглощения. Особенностью метода является использование двухлучевой дифференциальной схемы, логарифмическое преобразование сигналов и регистрация ...
Added: October 26, 2022
, , et al., Письма в Журнал технической физики 2019 Т. 45 № 16 С. 49-51
The characteristics of a 23-μm in diameter microdisk laser are studied under high-frequency modulation with a heatsink stabilized at 18оC. It is shown that the minimum consumption of electrical energy is 1.6 pJ/bit as achieved at modulation frequency of 4.2 GHz. The maximum modulation frequency reaches 6.7 GHz with energy consumption of 3.3 pJ/bit. ...
Added: December 8, 2020
, , et al., IEEE Photonics Technology Letters 2022 Vol. 34 No. 24 P. 1349-1352
We report on the fabrication and studies of Ø100 μm half-disk lasers with an active region based on InGaAs/GaAs quantum dots providing very high modal gain. Such resonators support whispering gallery modes propagating at the cavity periphery. The microlasers show directional light outcoupling: continuous-wave output power emitted from the flat side reaches 17 mW, which is about 7 times greater than the ...
Added: December 13, 2022
, , et al., Photonics 2023 Vol. 10 No. 3 Article 235
The two-state lasing phenomenon, which manifests itself in simultaneous laser emission through several optical transitions of quantum dots, is studied in microdisk diode lasers with different cavity diameters. The active region represents a multiply stacked array of self-organized InAs/InGaAs/GaAs quantum dots emitting in the wavelength range of 1.1–1.3 um. Two-state lasing, which involves the ground-state and the first excited-state ...
Added: April 25, 2023
Температурные характеристики кольцевых лазеров с активной областью на основе InAs/InGaAs/GaAs-квантовых точек оптического диапазона 1.3 μm
, , et al., Письма в Журнал технической физики 2022 Т. 48 № 18 С. 36-40
The temperature characteristics of ring lasers with a diameter of 480 μm of the novel structure with an active region based on ten layers of InAs/InGaAs/GaAs quantum dots were studied. Lasers demonstrated a low threshold current density (200 A/cm2 at 20°C in continuous wave regime), the characteristic temperature of the threshold current in the range 20–100°C was 68 K, the ...
Added: October 3, 2022
, , et al., Journal of Physics D: Applied Physics 2021 Vol. 54 Article 453001
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for creating compact, energy-efficient light sources (microlasers) for various applications owing to their small footprints, high Q factors, planar geometry, in-plane light emission, and high sensitivity to the environment. In this review we present the most recent advances in III–V microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators and discuss ...
Added: September 3, 2021
, , et al., Proceedings of SPIE (США) 2012 Vol. 8700 P. 16.1-16.6
In this paper we performed 2D and 3D device simulations to analyze the impact of technology scaling on the lattice heating in n-channel bulk silicon and silicon-on-insulator MOS transistors with gate lengths from 0.5 to 0.1 um. Maximum lattice temperatures and transistor thermal resistances for different gate lengths and bias voltages were calculated. The increase ...
Added: January 23, 2014
, , et al., Физика металлов и металловедение 2021 Т. 122 № 9 С. 933-939
In this work, by the method of matrix synthesis, nanowires (NPs) of various types were obtained - from pure cobalt, from an alloy of cobalt with copper and layer structures consisting of alternating layers of cobalt and copper of various thicknesses. Structural features of the arrays have been investigated by the method of nuclear magnetic ...
Added: November 12, 2021
Comparing energy dissipation mechanisms within the vortex dynamics of gap and gapless nano-sized superconductors
, , et al., Comparing energy dissipation mechanisms within the vortex dynamics of gap and gapless nano-sized superconductors / Cornell University. Series cond-mat "arxiv.org". 2022. No. 2209.
The presence of magnetic fields and/or transport currents can cause penetration of vortices in superconductors. Their motion leads to dissipation and resistive state arises, which in turn strongly affects the performance of superconducting devices such as single-photon and single-electron detectors. Therefore, an understanding of the dissipation mechanisms in mesoscopic superconductors is not only of fundamental ...
Added: November 7, 2022
Investigation of far-field patterns of semiconductor microlasers with an active region based on InGaAs/GaAs quantum well-dots
, , et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 25-30
Added: March 15, 2023
, , et al., Физика и техника полупроводников 2020 Т. 54 № 6 С. 570-574
A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a function of the ambient temperature and the microlaser diameter. It is shown that there exists a minimum microdisk diameter determined by self-heating, up to which continuous-wave lasing can be reached ...
Added: September 15, 2020
Энергопотребление при высокочастотной модуляции неохлаждаемого InGaAs/GaAs/AlGaAs-микродискового лазера
, , et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Influence of a nonuniform thermal quench and circular polarized radiation on spontaneous current generation in superconducting rings
, , , Physical Review B: Condensed Matter and Materials Physics 2022 Vol. 105 No. 2 Article L020504
We theoretically study the nonequilibrium dynamics of the order parameter of a superconducting ring inhomogeneously quenched through its transition temperature. Numerical simulations based on spectral decomposition of the time-dependent Ginzburg-Landau equation reveal that current-carrying superconducting states can be generated in the ring under certain fast local temperature quench conditions. We also show that illumination of ...
Added: December 10, 2022
, , et al., Journal of Physics: Conference Series 2020 Vol. 1695 No. 1 Article 012154
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, ...
Added: May 18, 2022
Увеличение оптической мощности микродисковых лазеров InGaAs/GaAs, перенесенных на кремниевую подложку методом термокомпрессии
, , et al., Письма в Журнал технической физики 2021 Т. 47 № 20 С. 3-6
The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power ...
Added: October 14, 2021
, , et al., IEEE Journal of Quantum Electronics 2020 Vol. 56 No. 5 P. 1-8
We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for the peak optical power limited by the thermal rollover effect, the corresponding injection current and excess temperature of the device. The ...
Added: July 30, 2020