Влияние процессов релаксации на перенос тепла, возникающего под действием интенсивных потоков энергии
Phenomenological model of temperature field evolution and effect of the relaxation processes caused by thermally activated defects and inertia of the medium on the thermal conductivity of solids under the action of intense energy flows is presented
A semiphenomenological model of the transport processes under the action of power energy sources is proposed. To explain the observed deviations of the linear system response to an external perturbation in the transport processes induced by intense energy fluxes, it is proposed to take into account the effect of inertia of the medium. The semiphenomenological model of processes is reduced to a system with two basis states. The techniques of the theory of microscopic objects for the solution of the system are applied. It is shown that the inertia of the medium is due to the finite time of establishing the equilibrium between the basis states.
In this paper the numerical simulation of surfactant dynamics in the topographically trapped long waves over a cylindrical shelf is described. Numerical modeling is based on the balance equation of the surface concentration. The dynamics of impurities was considered in the advection - diffusion - relaxation model. The comparison of different models of the shelf: endless slope, shelf - step concave exponential shelf has been made. It was established that the transverse bottom topography does not signifi cantly affect the geometry of the distribution of the pellicle, but it has an impact on the quantitative parameters of concentration. The infl uence of the number of mode on the concentration level for various models of the shelf was studied. The growth of the modes number increases the derivative concentration extremes from the equilibrium level.
A new mathematical model of heat transfer in silicon field emission pointed cathode of small dimensions is constructed which permits taking its partial melting into account. This mathematical model is based on the phase field system, i.e., on a contemporary generalization of Stefan-type problems. The approach used by the authors is not purely mathematical but is based on the understanding of the solution structure (construction and study of asymptotic solutions) and computer calculations. The book presents an algorithm for numerical solution of the equations of the obtained mathematical model including its parallel implementation. The results of numerical simulation conclude the book.
The book is intended for specialists in the field of heat transfer and field emission processes and can be useful for senior students and postgraduates.
New quasi – 3D numerical model for thermal analysis of the BGA packages is presented. The general 3D heat transfer problem is correctly transformed to the set of 2D equations for temperature distributions in different layers of the package. The complexity and CPU time of the thermal analysis are many times reduced. The results of BGA package thermal modeling are presented.
The computational model of the temperature sensors integrated on the IC chip with power transistors is developed. The 2D/3D problem of sensor placement is mathematically described by the classic heat transfer equation coupled with the equation for current density distribution. It is shown that parasitic effects of sensor current displacement and thermo-emf generation resulting from a temperature gradients (Seebeck effect) must be taken into account. For this purpose the special differential equation is introduced. The examples of point- and strip-like temperature sensors modeling for power BJTs and ICs are demonstrated.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
By using superconducting quantum interference device (SQUID) magnetometry, we investigated anisotropic high-field (H less than or similar to 7T) low-temperature (10 K) magnetization response of inhomogeneous nanoisland FeNi films grown by rf sputtering deposition on Sitall (TiO2) glass substrates. In the grown FeNi films, the FeNi layer nominal thickness varied from 0.6 to 2.5 nm, across the percolation transition at the d(c) similar or equal to 1.8 nm. We discovered that, beyond conventional spin-magnetism of Fe21Ni79 permalloy, the extracted out-of-plane magnetization response of the nanoisland FeNi films is not saturated in the range of investigated magnetic fields and exhibits paramagnetic-like behavior. We found that the anomalous out-of-plane magnetization response exhibits an escalating slope with increase in the nominal film thickness from 0.6 to 1.1 nm, however, it decreases with further increase in the film thickness, and then practically vanishes on approaching the FeNi film percolation threshold. At the same time, the in-plane response demonstrates saturation behavior above 1.5-2T, competing with anomalously large diamagnetic-like response, which becomes pronounced at high magnetic fields. It is possible that the supported-metal interaction leads to the creation of a thin charge-transfer (CT) layer and a Schottky barrier at the FeNi film/Sitall (TiO2) interface. Then, in the system with nanoscale circular domains, the observed anomalous paramagnetic-like magnetization response can be associated with a large orbital moment of the localized electrons. In addition, the inhomogeneous nanoisland FeNi films can possess spontaneous ordering of toroidal moments, which can be either of orbital or spin origin. The system with toroidal inhomogeneity can lead to anomalously strong diamagnetic-like response. The observed magnetization response is determined by the interplay between the paramagnetic-and diamagnetic-like contributions.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.