Effects of Spatial Dispersion in Symmetric and Asymmetric Semiconductor Quantum Wells
Effects of spatial dispersion in quantum wells are discovered and investigated in detail in reflection experiments. We studied oblique incidence of pure s and p polarized light which has been reflected elliptically polarized. The polarization degree of the reflected light is governed by the in‐plane photon momentum which is the distinctive feature of the spatial dispersion effects. The effects of spatial dispersion are allowed by symmetry in inversion‐asymmetric systems only. Therefore we investigated bulk‐inversion asymmetric ZnSe/ZnMgSSe and structure‐asymmetric GaAs/AlGaAs and CdZnTe/CdTe/CdMgTe quantum wells. We studied the reflected light polarization state in the vicinity of the heavy‐ and light‐exciton resonances where the spatial dispersion effects are resonantly enhanced.