Interaction of surface plasmon-phonon polaritons with terahertz radiation in heavily doped GaAs epilayers
We report on experimental studies of the surface plasmon-phonon polariton excitations in heavily doped GaAs epitaxial layers. Reflection and emission of radiation in the frequency range of 2–19 THz were investigated for samples with surface-relief grating, as well as for samples with planar surface. The reflectivity spectrum for p-polarized radiation measured for the sample with the surface-relief grating demonstrates a set of resonances attributed to excitations of different surface plasmon-phonon polariton modes. The observed resonances lie beyond the limits of the Reststrahlen band. Terahertz radiation emission from the samples was studied in nonequilibrium conditions under the pulsed electric field excitation. Two contributions to the spectral density of the terahertz radiation have been revealed, the first being due to bulk plasmon–phonon polaritons (PPhPs), while the second originating from the surface PPhPs. A field dependence of the effective temperature of the bulk PPhPs has been established. Polarization dependence of the terahertz radiation related to surface PPhPs has been experimentally examined for the first time.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.