Electron Spin Alignment in InSb Type‐II Quantum Dots in an InAs Matrix
Electronic spin polarization up to 100 % has been observed in type‐II narrow‐gap heterostructures with InSb quantum dots in an InAs matrix via investigation of circular‐polarized photoluminescence at external magnetic field applied in Faraday geometry. Energy spectrum of holes confined in monolayer scale InSb/InAs quantum well is calculated using tight‐binding approach. The observed effect is explained in terms of strong Zeeman splitting of electrons in InAs matrix due to their large intrinsic g‐factor and corresponding optical transition selection rules. Temperature dependence of polarization degree well fit obtained data providing its experimental verification of suggested model.