Сравнительный анализ инжекционных микродисковых лазеров на основе квантовых ям InGaAsN и квантовых точек InAs/InGaAs
The results are presented on a comparative analysis of spectral and threshold characteristics of diode microdisk lasers operating at room temperature in a spectral range of 1.2xx µm with different active regions: InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots. It was found that microlasers of a comparable size with quantum wells have higher lasing threshold compared to microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of the radiated power with the laser modes. They are also characterized by a jump to excited-state optical transition lasing. The InGaAsNbased microdisk lasers lack these disadvantages.