• A
  • A
  • A
  • ABC
  • ABC
  • ABC
  • А
  • А
  • А
  • А
  • А
Regular version of the site

Article

Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer

Optics Express. 2017. Vol. 25. No. 14. P. 16754-16760.
Kryzhanovskaya N., Moiseev E., Polubavkina Y., Maximov M., Lipovskii A., Zhukov A. E.

In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under pulsed injection, lasing is achieved in microlasers with diameters of 23, 27, and 31 µm with a minimal threshold current density of 28 kA/cm2. Lasing spectrum is predominantly single-mode with a dominant mode linewidth as narrow as 35 pm.