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  • Лазерная генерация перенесенных на кремний инжекционных микродисков с квантовыми точками InAs/InGaAs/GaAs
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News
October 8, 2026
HSE Experts Take Part in 23rd Annual Meeting of Valdai Discussion Club
The 23rd Annual Meeting of the Valdai Discussion Club was held from September 28 to October 1, 2026 under the theme ‘Responsibility for the Future: Limits of the Possible, or Limitless Possibilities?’ The forum brought together 120 experts from 40 countries, including representatives of China, the United States, India, Brazil, the United Kingdom, Germany, Egypt, Iran, and Japan.
October 7, 2026
‘Our Team Consists of True Leaders in Their Respective Academic Disciplines
The HSE International Centre of Decision Choice and Analysis studies a wide range of methods for analysing decision-making and possible scenarios for the development of natural, socio-economic, and political phenomena using various mathematical models. The application of advanced mathematical methods to forecasting helps to prevent negative outcomes and avoid erroneous decisions. The HSE News Service spoke to the centre’s director, Prof. Fuad Aleskerov, about its work.
October 6, 2026
International N5 Symposium ‘Neural Networks and Nonlinearity in Nizhny Novgorod Brings Together Scientists from Russia and Serbia
The International N5 Symposium ‘Neural Networks and Nonlinearity in Nizhny Novgorod’ was held at the Nizhny Novgorod House of Scientists from September 23 to 26. The event was organised by HSE University–Nizhny Novgorod and the Nizhny Novgorod House of Scientists, with the participation of Sberbank and the Institute of Physics Belgrade. The symposium was held for the second time: the first conference took place in 2025 and attracted considerable interest from the academic community.

 

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Лазерная генерация перенесенных на кремний инжекционных микродисков с квантовыми точками InAs/InGaAs/GaAs

Письма в Журнал технической физики. 2020. Т. 46. № 16. С. 3–6.
Zhukov A., Moiseev E., Nadtochiy A., Dragunova A., Kryzhanovskaya N., Кулагина М. М., Можаров А. М., Кадинская С. А., Симчук О. И., Зубов Ф. И., Максимов М. В.

AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, thermal resistance, and spectral characteristics was revealed. Microdisks lase in continuous-wave mode without external cooling with the threshold current density of 0.7 kA/cm2. Lasing wavelength remains stable (<0.1 nm/mA) against injection current increment.

Research target: Physics Engineering and Technology Nanotechnologies
Priority areas: engineering science
Language: Russian
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Keywords: наноструктурымикродисковый лазер полупроводниковые лазерыгибридная интеграция
Publication based on the results of:
Optoelectronic devices for optical interconnects and optical on-chip systems based on semiconductor nanomaterials (2020)
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