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Лазерная генерация перенесенных на кремний инжекционных микродисков с квантовыми точками InAs/InGaAs/GaAs

Жуков А. Е., Моисеев Э. И., Надточий А. М., Драгунова А. С., Крыжановская Н. В., Кулагина М. М., Можаров А. М., Кадинская С. А., Симчук О. И., Зубов Ф. И., Максимов М. В.

AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, thermal resistance, and spectral characteristics was revealed. Microdisks lase in continuous-wave mode without external cooling with the threshold current density of 0.7 kA/cm2. Lasing wavelength remains stable (<0.1 nm/mA) against injection current increment.