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Article

SPICE-модели JFET и MOSFET в широком диапазоне температур

The circuit design of electronic devices for harsh operating conditions requires SPICE models of electronic components that take into account the influence of ultra-low and ultra-high ambient temperatures. However, the standard SPICE models of electronics component, available in commercial versions of SPICE-like simulators, provide an adequate accuracy in a limited temperature range (-60 … +150 °C) and can not be used to calculate the electronic circuits in the ultra-low/high temperature range. This paper presents the modified Low-T and High-T SPICE models of transistors with the MOSFET and JFET structure, designed to calculate the electronic circuits in the temperature range from -200 °C to +300 °C. All models have been built using a universal approach, which consists in adding additional expressions for temperature-dependent parameters to the standard devices SPICE-model. The procedure for extracting the SPICE model parameters, based on the measurement results or TCAD simulation of a standard set of I-V and C-V characteristics in the wide temperature range, has been developed. The error simulation of the I-V characteristics does not exceed 10-12 % in the temperature range from -200 °C to +300 °C.