Microwave Conductivity in Two-Band Superconductors V3+x Si1−x
We present the results of investigations of the temperature dependences of complex conductivity σ(T) = σ′(T)−iσ″(T) at frequency 9.4 GHz in series of single crystals V3+xSi1−x with different Si content. The data exhibit peculiarities typical for multiband superconductors, namely a nonlinear temperature dependence of resistivity above superconducting transition temperature Tc, suppression of superconducting transition temperature Tc by nonmagnetic impurities, a positive curvature of σ″(T) curves close to Tc, and a coherence peak in σ′(T) at T∼Tc/2. Using a two-band model in the weak-coupling regime, we demonstrate that the behavior of Tc and the evolution of σ(T) with Si-content variation are consistently described by changing of the interband scattering rate.
We develop a self-consistent approach for calculating the local impedance at a rough surface of a chiral p-wave superconductor. Using the quasiclassical Eilenberger-Larkin-Ovchinnikov formalism, we numerically find the pair potential, pairing functions, and the surface density of states taking into account diffusive electronic scattering at the surface. The obtained solutions are then employed for studying the local complex conductivity and surface impedance in the broad range of microwave frequencies (ranging from subgap to above-gap values). We identify anomalous features of the surface impedance caused by generation of odd-frequency superconductivity at the surface. The results are compared with experimental data for Sr2RuO4 and provide a microscopic explanation of the phenomenological two-fluid model suggested earlier to explain anomalous features of the microwave response in this material.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.