Charge characteristics of MOS structure with thermal SiO2 films doped with phosphorus under high-field electron injection
The characteristics modification of the MOS devices with thermal silicon dioxide, passivated by phosphorus-silicate glass (PSG) layer by Fowler-Nordheim (FN) tunneling electron injection in high-fields is studied. The DC high-field tunneling injection from silicon and metal was used for charge state modification of MOS structure gate dielectric. The parameters characterizing the charge state change of MOS structures during modification had been monitored using time dependence of voltage change VI applied to a sample during the injection. It was found out that the range of threshold voltage changes of MOS devices after electron injection could reach values up to 6 V. The range increases with growth of phosphorus concentration in PSG layer. However, the value of the injected charge has to be less than 0.1 mC/cm2 during the adjustment of the threshold voltage in order to provide acceptable values of surface state density.
It has been shown that the increase of charge stability of MDS-systems can be achieved by optimal choosing the thickness of dielectric films of silicon dioxide and phosphorous soda-lime glass.
In this study, a new technique of multilevel current stress for investigation thin oxide layers of MOS structures is proposed. This technique allows to investigate the generation and relaxation of positive and negative charges, accumulating in, nano-thickness gate dielectric of MOS structures under many stressing situations. The parameters characterizing the change of charge state in the thin oxide layers of MOS structures during the stress have been monitored by means of time dependence of voltage shift applied to a sample during the injection. In comparison with the conventional techniques our method is nondestructive. We consider this method to provide higher accuracy and to decrease the probability of dielectric breakdown. The application of present technique was carried out during the investigation of charge generation and relaxation, during and after high-field tunnel injection of electrons in thin film of SiO2. The thin oxide layers of MOS structures after plasma and irradiation treatments also are investigated.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.