Радиационная стойкость конструкционного радиационно-защитного композиционного материала на основе магнетитовой матрицы
The main content of the training manual is:consideration of issues of interaction of the main types of radiation with a solid, structures of specific point and group radiation defects in silicon, germanium and gallium arsenide are considered, Theoretical prerequisites for the calculation of the change in the basic electro-physical parameters of semiconductors are considered; a summary of the currently available empirical dependences of the main parameters of semiconductors on the integral irradiation flux by various types of radiation exposure is given.
This paper presents the study of resistance to atomic oxygen-based composites samples polyimide matrix using as fillers nanoparticles following: Al2O3 (corundum) with average particle size 40-80 nm; TiO2 (rutile) size of 30-40 nm and a WC (tungsten carbide) size of 70-300 nm. In the latter case, as we can see, the maximum size of the particles used is slightly higher than the upper limit of the conventional nano. Samples of each composite of said fillers were made into films of thickness ~ 50 microns for the same mass of filler content equal to 3%. Samples were exposed to a flow of atomic oxygen on magnitoplazmodinamicheskom accelerator SINP on mteodike described in . After irradiation, were measured by atomic oxygen and the mass loss of samples was conducted their surface examination using a scanning electron microscope, which also allow to determine the elemental composition of the samples at predetermined areas of the surface.
Electronic equipment of spacecraft is exposed to ionizing radiation of outer space, which is another reason for failure. Currently accepted to evaluate separately the reliability of electronic equipment and its radiation resistance, despite the fact that these phenomena are interrelated. The aim of the article is to estimate effects of ionizing radiation on the reliability of microwave devices, namely, the probability of failure-free operation of a microwave amplifier.
The probability of device failure model Q(t) for active lifetime is constructed as a product of the probabilities of failure Q1(t) - the probability of device failure due to set the total ionizing dose, Q2(t) - probability of failure of the device in the absence of exposure to ionizing radiation, Q3(t) - the probability of a single effect event. Probabilities Q2(t) and Q3(t) are valued at current normative documents. Probability Q1(t) is calculated based on probabilistic and physical models.
Research shows that, despite the high radiation resistance of microwave devices used in electronic equipment of spacecraft, when the long lifetime is required the low intensity radiation will have a tangible impact on the probability of failure. And that should be considered when designing equipment.
The main content of the training manual is:consideration of the issues of the effect of radiation creating structural defects on the main parameters of bipolar transistors, Consider issues related to the influence of ionization factors on the operation of transistors (radiation transients), the effect of nuclear reactions and fast annealing on the parameters of transistors is considered; Classification of radiation effects in bipolar transistors is given.
Experiments revealed higher surface radiation resistance of the sweating aluminium-lithium alloys under long-term ion bombardment, so that it can be recommended for use in stressed sections of thermonuclear synthesis equipment.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.