Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.
A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects. An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation hardness of CMOS IC fragments depending on the total absorbed dose. The simulation time is estimated.
The multi-level methodology for CMOS SOI/SOS IC element parameterization for VLSI radiation hardness prediction by CAD systems is developed. The methodology includes semiconductor technology simulation, CMOS SOI/SOS MOSFET device simulation with radiation effects, irradiated test structures investigation, radiation dependent SPICE model parameter extraction with ICCAP. The measured data of irradiated MOSFET test structures is used for TCAD calibration and SPICE model creation. The results show a good correlation between the simulated with the developed models and measured IC and VLSI response to the total dose and other components of the radiation environment.
The main content of the training manual is:consideration of the issues of the effect of radiation creating structural defects on the main parameters of bipolar transistors, Consider issues related to the influence of ionization factors on the operation of transistors (radiation transients), the effect of nuclear reactions and fast annealing on the parameters of transistors is considered; Classification of radiation effects in bipolar transistors is given.
The temperature range of SPICE models of bipolar and field-effect transistors is extended from the standard commercial level (-60...+150 °C) to harsh conditions level (-200...+300 °C) for low/high temperature ICs design. This is done by including additional equations for temperaturedependent parameters, and by connecting additional elements to the device equivalent circuit to take into account the thermal effects. The universal automated methodology of model parameters extraction from the experimental data measured at low and high temperatures is proposed. The good agreement between simulated and measured device characteristics is achieved. The RMS error is not more than 10–20%.
An efficient methodology of electro-thermal design of smart power semiconductor
devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for
2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and
high power elements, temperature sensors, IC chips simulation are considered
The effects of neutron irradiation on both Si bipolar junction transistor (BJT) and SiGe heterojunction transistor (HBT) are investigated using Synopsys TCAD tool. The carrier lifetime degradation under irradiation models are included in the program. For SiGe HBT at fluences as high as 10**15 cm-2 the degradation of peak current gain is less than 40%, and the device maintains a peak current gain of 80 100 after 10**15 cm-2. The simulation results are in good agreement with experimental data.
An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies of parameters VTO, GAMMA, KP, E0 are introduced and 2) additional circuit elements to account for floating-body effects and radiation-induced leakage currents under static and dynamic radiation influence are connected. Maximum simulation error is 5–7% in the dose range up to 1 Mrad. It is shown that EKV-RAD spends less CPU time by 15–30% for analog and 40–50% for digital SOI/SOS CMOS circuits simulations compared to BSIMSOI-RAD model.
Generalized error-locating codes are discussed. An algorithm for calculation of the upper bound of the probability of erroneous decoding for known code parameters and the input error probability is given. Based on this algorithm, an algorithm for selection of the code parameters for a specified design and input and output error probabilities is constructed. The lower bound of the probability of erroneous decoding is given. Examples of the dependence of the probability of erroneous decoding on the input error probability are given and the behavior of the obtained curves is explained.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
The conference “2021 Systems of signals generating and processing in the field of on board communications” is organized with technical sponsorship of Russian (Moscow) IEEE Circuits and Systems (CAS04) Chapter IEEE Region 8, Russian Section Chapter, MTT/ED and Institute of Radio and Information Systems Association (IRIS), Vienna, Austria. The conference featured invited researchers, educators, managers, and graduate students, whose research activity, case studies or best practices, are shedding light on the theory or practice of engineering, include modern digital transportation systems design and technical operation, radio waves propagation, transmitting, receiving and processing signals in television and radio broadcasting devices, information technologies in transport. The main areas of the conference “Systems of signals generating and processing in the field of on board communications” include modern digital transportation systems design and technical operation, radio waves propagation, transmitting, receiving and processing signals in television and radio broadcasting devices, information technologies in transport. FIELD OF INTEREST: Components, Circuits, Devices and Systems; General Topics for Engineers; Signal Processing and Analysis. Reports presented at the conference are grouped in 6 sections: 1. Antennas and Radio Waves Propagation. 2. Navigation and Mathematical Algorithms of an Object Space Orientation. 3. Radiofrequency Applications. 4. Wire and Optical Communication and Control Systems. 5. Intelligent Transport Systems (ITS): Sub-section 1: Use of digital ITS infrastructure in telematic control systems on urban passenger transport Sub-section 2: Peculiarities of data exchange in cooperative ITS Sub-section 3: Theoretical Aspects of Artificial Intelligence Systems Development for Transportation Engineering Sub-section 4: Test methods of motor vehicles integrated into an intelligent transport environment 6. Digital signal processing in on-board radio systems
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.