Применение подсветки контактов для измерений проводимости высокоомных полупроводников
The influence of light illumination of ohmic contacts to high-ohmic gallium arsenide and cadmium telluride samples is investigated. It is revealed, that near-contact –area illumination influences not only upon transition resistance, but also upon volume conductivity of the samples due to increasing of free carrier concentration. The new method of separate determination of ohmic contact transition resistance and sample volume resistance is suggested, suitable for high-ohmic semiconductors. The qualitative model, explaining sample volume conductivity increasing due to near-contact-area illumination, is proposed.