Modification of metal-oxide-semiconductor devices by electron injection in high fields
The characteristics modification of the MOS devices with thermal silicon dioxide, passivated by phosphorus-silicate glass (PSG) layer by Fowler-Nordheim (FN) tunneling electron injection in high-fields is studied. The DC high-field tunneling injection from silicon and metal was used for charge state modification of MOS structure gate dielectric. The parameters characterizing the charge state change of MOS structures during modification had been monitored using time dependence of voltage change VI applied to a sample during the injection. It was found out that the range of threshold voltage changes of MOS devices after electron injection could reach values up to 6 V. The range increases with growth of phosphorus concentration in PSG layer. However, the value of the injected charge has to be less than 0.1 mC/cm2 during the adjustment of the threshold voltage in order to provide acceptable values of surface state density.