Высокочастотная модель транзистора со статической индукцией

Известия высших учебных заведений. Электроника. 2024. Т. 29. № 6. С. 772–786.

Максименко Ю. Н., Petrosyants K. O., Силкин Д. С., Грабежова В. К.

Physical and mathematical model of a transistor with static induction makes it possible to calculate the main current-voltage characteristics and to analyze the design of devices for static mode in bipolar operation of transistor, and also to understand the possibilities of crystal design improvement. However, this model does not allow analyzing the operation of devices with static induction at high frequencies, without which it is impossible to create a device design with optimal parameters. In this work, a model of devices with static induction for their operation analysis at high frequencies is presented. The ways of crystal design improvement allowing an increase in switching rate by more than an order of magnitude are proposed. Using the developed model, an analysis of the operation of the KP926 transistor at high frequencies was carried out. It has been established that it is possible to make changes to the crystal design that will lead to an increase in the operating frequency of the device by more than an order of magnitude while maintaining the main current-voltage characteristics.

Keywords: dynamic characteristics, быстродействие, TCAD, физико-математическая модель, static induction transistor, транзистор со статической индукцией, сопротивление транзистора в открытом состоянии