Investigation of Electrostatic Discharge Effect on High-power Mosfet-Transistors Considering the Influence of PCB
Computer simulations of electrostatic discharges (ESD) effect on high-power MOSFET-transistors with built-in
protection have been carried out. It was found that the transistors with low gate-source capacitance are more sensitive to the ESD effect.The dependence between printed circuit board (PCB)
capacity, causing breakdown of MOSFET-transistor gate dielectric, and ESD voltage was established.
It is shown that for transistor haying low gate-source capacitance, the existence of the built-in protection does not prevent gate dielectric breakdown at electrostatic discharges. It is recommended to provide external ESD protection for high-power MOSFET-transistors with built-in protection having low gate-source capacitance, for example, having turned on the ESD protection diode in the electric circuit.