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Статья

Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase

Semiconductors. 2016. Vol. 50. No. 5. P. 590-595.
Alpatov A., Vikhrov S., Kazanskii A., Lyaskovskii V., Rybin N., Rybina N., Forsh P.

The correlation properties of the structure of nc-Si/a-Si:H films with different volume fractions of the crystalline phase are studied using 2D detrended fluctuation analysis. Study of the surface relief of experimental samples showed that with increasing in volume fraction of the crystalline phase in thenc-Si/a-Si:H films, the size and number of nanoclusters on their surface grow. The size of Si nanocrystals in the a-Si:H matrix (6–8 nm) indicates the formation of coarse nanoclusters due to the self-organization of Si nanocrystals in groups under laser radiation. According to 2D detrended fluctuation analysis data, the number of correlation vectors (harmonic components) in the nc-Si/a-Si:H film structure increased with an increase in the nanocrystal fraction in the films.