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Статья

Anomalous Hall effect in MnSi: intrinsic to extrinsic crossover.

JETP Letters. 2015. Vol. 101. No. 7. P. 459-464.
Glushkov V., Lobanova I., Ivanov V., Demishev S.V.

Temperature dependences of low field Hall resistivity H are used to separate anomalous (a H) and nor- mal (RHB) contributions to Hall effect in chiral magnet MnSi (Tc  29.1K). It is found that the transition between paramagnetic (T > Tc) and magnetically ordered (T < Tc) phases is accompanied by the change inanomalous Hall resistivity from low temperature behavior governed by Berry phase effects (aH = μ0S22M,T < Tc) to high temperature regime dominated by skew scattering (aH = μ0S1M, T > Tc). The crossover between the intrinsic (2) and extrinsic () contributions to anomalous Hall effect develops together with the noticeable increase of the charge carriers’ concentration estimated from the normal Hall coefficient (from n/nMn(T > Tc)  0.94 to n/nMn(T < Tc)  1.5, nMn  4.2 · 1022 cm−3). The observed features may corre- spond to the dramatic change in Fermi surface topology induced by the onset of long range magnetic order in MnSi.