Towards the realization of NbSe2 NIR photodetectors integrated on a silicon nitride waveguide

St. Petersburg Polytechnical University Journal: Physics and Mathematics. 2024. Vol. 17. No. 3.2. P. 241–245.

K.V. Shein, A.N. Lyubchak, Zharkova E., Bandurin D. A., Charaev I., I.A. Gayduchenko, G.N. Goltsman

Photonic integrated circuits (PIC) represent a promising platform for applications in the field of quantum technologies, such as quantum computing and cryptography. One of the key components for these applications is detectors based on thin superconducting films. Nevertheless, fabricating thin detectors atop a waveguide utilizing conventional superconducting materials acquired through magnetron sputtering presents a multifaceted and cost-intensive technological challenge. As an alternative approach in this study, we present the concept of an on-chip superconducting detector based on the two-dimensional superconductor NbSe2, obtained through mechanical exfoliation. The advantage of this approach lies in the ease of device integration onto the waveguide and the possibility to create a detector with a thickness of just one atomic layer. We also demonstrated a method to fabricate thin superconducting nanowires from this material, as the ability to precisely structure the material is crucial for the development of on-chip detectors.

Keywords: фотоника, photonics, двумерные материалы, 2D materials, Photonic integrated circuits (PICs), Интегральная фотоника

Publication based on the results of: Фотодетекторы на основе новых двумерных материалов для разработки фотонных интегральных схем (2024)