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High-Quality Graphene Using Boudouard Reaction
Following the game-changing high-pressure CO (HiPco) process that
established the first facile route toward large-scale production of single-walled
carbon nanotubes, CO synthesis of cm-sized graphene crystals of ultra-high
purity grown during tens of minutes is proposed. The Boudouard reaction
serves for the first time to produce individual monolayer structures on the
surface of a metal catalyst, thereby providing a chemical vapor deposition
technique free from molecular and atomic hydrogen as well as vacuum
conditions. This approach facilitates inhibition of the graphene nucleation
from the CO/CO2 mixture and maintains a high growth rate of graphene
seeds reaching large-scale monocrystals. Unique features of the Boudouard
reaction coupled with CO-driven catalyst engineering ensure not only
suppression of the second layer growth but also provide a simple and reliable
technique for surface cleaning. Aside from being a novel carbon source,
carbon monoxide ensures peculiar modification of catalyst and in general
opens avenues for breakthrough graphene-catalyst composite production.