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Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation
Semiconductors. 2020. Vol. 54. P. 355-361.
Kalinovskii V. S., Kontrosh E. V., Klimko G. V., Ivanov S., Yuferev V. S., Ber B. Y., Kazantsev D. Y., Andreev V. M.
The creation of connecting tunnel diodes with a peak tunneling-current density higher than the density of the short-circuit current of photoactive p–n junctions is an important task in the development of multijunction photoconverters (III–V) of high-power optical radiation. Basing on numerical simulation of the J–U characteristics of tunnel diodes, a method is proposed for increasing the peak tunneling-current density by including a thin undoped i-type layer with a thickness of several nanometers between degenerate layers of the tunnel diode. The p–i–n-GaAs/Al0.2Ga0.8As structures of the connecting tunnel diodes with a peak tunneling-current density of up to 200 A/cm2 are grown by molecular-beam epitaxy.
Yurasov D. V., Baidakova N. A., Verbus V. A. et al., Semiconductors 2019 Vol. 53 No. 10 P. 1324-1328
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and selective chemical etching using the “stress concentration” approach. To provide a heat sink from Ge microstructures, their formation scheme is modified so ...
Added: October 24, 2019
Bolshakov A., Fedorov V., Sibirev N. et al., Physica Status Solidi - Rapid Research Letters 2019 Vol. 13 No. 11 P. 1900350
Growth and properties of the self‐catalyzed heterostructured GaP nanowires (NWs) with GaP1 − xAsx insertions in the form of nanodiscs (NDs) grown by means of molecular‐beam epitaxy on Si (111) substrate are studied. To obtain the NDs with the different composition and optoelectronic properties, the ratio of As and P fluxes is varied. Structural properties of the synthesized ...
Added: September 29, 2020
Solov’ev V. A., Chernov M. Y., Komkov O. S. et al., JETP Letters 2019 Vol. 109 P. 377-381
Metamorphic InAs(Sb)/InGaAs/InAlAs quantum-confined heterostructures with thin (1–5 nm) strongly mismatched GaAs and InAs inserts in a gradient metamorphic InxAl1−xAs buffer layer have been grown on GaAs (001) substrates by molecular beam epitaxy. It has been shown that the use of a 5-nm GaAs insert in the region of a metamorphic buffer layer at x ~ 0.37 almost ...
Added: May 31, 2021
Lutsenko E. V., Rzheutski M. V., Nagorny A. V. et al., Quantum Electronics 2019 Vol. 49 No. 6 P. 535-539
The stimulated emission and photoluminescence of ultrathin GaN quantum wells with a nominal thickness of 1.5 – 2 monolayers (MLs) and AlN barrier layers 4 – 6.66 ML thick, obtained by plasma-activated molecular beam epitaxy on c-sapphire substrates, are studied. The stimulated emission of TE polarisation in ultrathin GaN/AlN quantum wells is obtained under pumping ...
Added: February 25, 2021
Sorokin S. V., Avdienko P. S., Sedova I. V. et al., Semiconductors 2019 Vol. 53 P. 1131-1137
The results of studies of the structural and optical properties of two-dimensional GaSe layers grown by molecular-beam epitaxy on GaAs(001) and GaAs(112) substrates using a valve cracking cell for the Se source are reported. The influence of the MBE growth parameters (the substrate temperature, Ga flux intensity, Se/Ga incident flux ratio) on the surface morphology ...
Added: May 31, 2021
Elsevier, 2018
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in ...
Added: February 19, 2021
Юрасов Д. В., Байдакова Н. А., Verbus V. A. et al., Физика и техника полупроводников 2019 Т. 53 № 10 С. 1360-1365
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and selective chemical etching using the “stress concentration” approach. To provide a heat sink from Ge microstructures, their formation scheme is modified so ...
Added: October 24, 2019
Zubov F. I., Muretova M. E., Asryan L. V. et al., Journal of Applied Physics 2018 Vol. 124 No. 13 Article 133105
The feasibility of implementation of asymmetric barriers (ABs) made of common materials for
completely aluminum-free diode lasers is studied. The ABs adjoining a low-dimensional active
region on both sides aim to prevent bipolar population in the waveguide layers and thus to suppress
parasitic recombination therein, which in turn would enhance the efficiency and temperature-stability
of the device. Our search ...
Added: March 16, 2021
Sedov E., Zavyalov V., Arutyunov K., Известия Уфимского научного центра РАН 2021 № 1 С. 39-43
In the middle of the last century, it was demonstrated that with a decrease in the size of superconducting structures, for example, the thickness of a thin film, its critical temperature TC shifts by a certain amount. It increases in aluminum, tin, and indium, and decreases in mercury, niobium, and lead. However, there is still ...
Added: January 25, 2021
Kalmykov A., Melentiev P., Balykin V., Laser Physics Letters 2020 Vol. 17 No. 4 P. 045901
In this paper we present measurements and comparison of SPP propagation length at the practically important telecom wavelength (1560 nm) as well as in the near-infrared and visible spectral ranges. The measurements were carried out for plane SPP waves excited on Ag film surface using optical microscopy of SPP waves in the far field. We ...
Added: January 15, 2021
M. : Faculty of Physics, MSU, 2017
The Low Temperature Physics Conference is an international event held every three years, under the auspices of the IUPAP through its Commission C5 on Low Temperature Physics. The aim of these conferences is to exchange information and views among the members of the international scientific community in the general field of Low Temperature Physics. It ...
Added: October 1, 2017
Boldyrev K., Романов А., Хаула Е. et al., Journal of the American Ceramic Society 2019 Vol. 102 No. 5 P. 2745-2751
Single crystal of TlCl was doped with NIR photoluminescent univalent bismuth cations by prolonged immersion in liquid bismuth metal. The ion exchange Tl+ + Bi0 ↔ Tl0 + Bi+ at the crystal surface with subsequent Bi+ migration to the bulk are expected to drive the doping process. Contrary with Bi‐doped TlCl crystals, grown by Bridgman method, the ion exchange does ...
Added: February 8, 2019
Budkov Y., Kolesnikov A. L., Polymer Science - Series C 2018 Vol. 60 No. Supplement 1 P. 148-159
Theoretical models of the conformational behavior of flexible polymer chains in mixed solvents enunciated in the world literature during the last decade are critically reviewed. Models describing different mechanisms of coil-to-globule transitions in a good solvent induced by cosolvent addition are highlighted. Special attention is given to the analysis of theoretical approaches to describing the ...
Added: November 30, 2018
Antipov A., Seleznev V., Vakhtomin Y. et al., IOP Conference Series: Materials Science and Engineering (MSE) 2020 Vol. 781 No. 1 P. 012011-1-012011-5
Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 µm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures ...
Added: December 10, 2020
Казанцев Д. В., Казанцева Е. А., Кузнецов Е. В. et al., Известия РАН. Серия физическая 2017 Т. 81 № 12 С. 1709-1714
Описаны принципы работы безапертурного сканирующего микроскопа ближнего оптического поля (ASNOM). Зондом в приборе служит металлизированная игла атомно-силового микроскопа, и оптическое взаимодействие с объектами на поверхности локализовано вблизи ее острия размером в несколько нанометров. Тело иглы имеет длину в несколько микрон, и это обеспечивает высокую эффективность ее электромагнитного взаимодействия с падающими на нее извне и излучаемыми ...
Added: December 6, 2020
Bodrova A., Osinsky A., Brilliantov N., Scientific Reports 2020 Vol. 10 Article 693
We study analytically and numerically the distribution of granular temperatures in granular mixtures for
different dissipation mechanisms of inelastic inter-particle collisions. Both driven and force-free systems
are analyzed. We demonstrate that the simplified model of a constant restitution coefficient fails to
predict even qualitatively a granular temperature distribution in a homogeneous cooling state. At the
same time we reveal ...
Added: February 25, 2020
A.Aronin, Abrosimova G., Materials Letters 2017 Vol. 206 P. 64-66
To obtain a correct estimate of the microhardness dependence on the size of nanocrystals, the microhardness
of amorphous-nanocrystalline samples with the same fraction of the crystalline phase and the same
composition of the amorphous matrix but different sizes of nanocrystals was studied. It is shown that the
dependence of microhardness on the nanocrystal size in the size range ...
Added: February 22, 2018
K. I. Kugel, Bianconi A., Poccia N. et al., Superconductor Science and Technology 2015 Vol. 28 No. 2 P. 024005-1-024005-8
The arrested nanoscale phase separation in a two-band Hubbard model for strongly correlated charge carriers is shown to occur in a particular range in the vicinity of the topological Lifshitz transition, where the Fermi energy crosses the bottom of the narrow band and a new sheet of the Fermi surface related to the charge carriers ...
Added: March 12, 2016
Бланк В. Д., Boldyrev K., Денисов В. Н. et al., Physical Review B: Condensed Matter and Materials Physics 2020 Vol. 102 P. 115153-1-115153-10
The electronic band structure of the phosphorus-doped high-quality high-pressure and high-temperature–
grown single crystal diamond was studied by infrared absorption, magneto- and electron paramagnetic resonance
spectroscopy, and first-principles calculations. The complete picture of the 1s → np± and 1s → np0 (n = 2, 3,
4) donor transitions with new 1s →3p0,4p0 and 1s →4p± transitions allowed us ...
Added: October 22, 2020
Ермилов А. И., Ivashov E., Международный журнал экспериментального образования 2014 № 1 С. 98-101
Devices of nanorelocation with the probes, the executing operations necessary for formation of quantum points are developed. Options of execution of devices are shown. ...
Added: January 20, 2014
Dziom V., Shuvaev A. V., Shchepetilnikov A. et al., Physical Review B: Condensed Matter and Materials Physics 2019 Vol. 99 No. 4 Article 045305
The integer quantum Hall effect is a well-studied phenomenon at frequencies below about 100 Hz. The plateaus in high-frequency Hall conductivity were experimentally proven to retain up to 33 GHz, but the behavior at higher frequencies has remained largely unexplored. Using continuous-wave terahertz spectroscopy, the complex Hall conductivity of GaAs/AlGaAs heterojunctions was studied in the ...
Added: December 11, 2020
Демин А. С., Масляев С. А., Пименов В. Н. et al., Физика и химия обработки материалов 2017 № 6 С. 5-17
Изучено влияние облучения в установке Плазменный фокус PF-1000 экстремальными энергетическими потоками быстрых ионов дейтерия (Ei≈100 кэВ, плотность мощности qi≈1011-1012 Вт/см2, длительность импульса ti≈10-50 нс) и дейтериевой плазмы (qpl≈109- 1010 Вт/см2, tpl≈50-100 нс) на структуру поверхностного слоя молибденовой пластины с учетом его плавления, частичного испарения и закалки расплава. На облученной поверхности обнаружено образование капельных структур, пор, ...
Added: December 25, 2017
Kuzmichev S. A., Kuzmicheva T. E., Tchesnokov S. N. et al., Journal of Superconductivity and Novel Magnetism 2016 Vol. 29 No. 4 P. 1111-1116
We present temperature dependences of the large and the small superconducting gaps measured directly by SnS-Andreev spectroscopy in various Fe-based superconductors and MgB2. The experimental L,S(T ) are wellfitted with a two-gap model based on Moskalenko and Suhl system of equations (supplemented with a BCS integral renormalization). From the fitting procedure, we estimate the key ...
Added: March 19, 2016
Kuzmin N. N., Maltsev V. V., Volkova E. A. et al., Inorganic Materials 2020 Vol. 56 No. 8 P. 828-835
We have studied and optimized conditions for spontaneous flux growth of TbCr3(BO3)4 crystals.
Phase relations in the pseudoternary system TbCr3(BO3)4–K2Mo3O10–B2O3 have been studied in the temperature
range 900–1130°C and the single-phase terbium chromium borate crystallization field has been
mapped out. It has been shown that increasing the TbCr3(BO3)4 content of the starting high-temperature
solution leads to a rhombohedral-to-monoclinic phase ...
Added: October 22, 2020