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Room temperature lasing from microdisk laser in aqueous medium
Journal of Physics: Conference Series. 2018. Vol. 1124. No. 5. P. 051007.
Fetisova M. V., Kryzhanovskaya N., Reduto I. V., Moiseev E., Blokhin S., Kotlyar K. P., Scherbak S., Lipovskii A. A., Kornev A. A., Bukatin A. S., Maximov M., Zhukov A.
Lasing of optically pumped semiconductor microdisks immersed in aqueous medium is demonstrated for the first time. Microlasers containing quantum dot active region were placed into the transparent polydimethylsiloxane chamber filled with distilled water at room temperature. The spectral and threshold characteristics of the lasers are compared in both air and aqueous environments. We suppose that such high-Q microlasers can be used as highly sensitive biosensors.
Kryzhanovskaya N., Polubavkina Y., Moiseev E. et al., Journal of Applied Physics 2018 Vol. 124 No. 16 P. 163102
High-index dielectric (Si) nanoantennas providing outcoupling of light from InAs/Ga(Al)As quantum dot (QD) microdisk lasers have been designed. The spatial distribution of light emitted from optically pumped QD microdisk lasers with a single Si spherical nanoantenna placed on the top surface of the microdisk was studied experimentally by confocal optical microscopy. Dependences of the emission ...
Added: December 9, 2020
Raskhodchikov A. V., Scherbak S., Kryzhanovskaya N. et al., Journal of Physics: Conference Series 2018 Vol. 1124 No. 5 P. 051031
We performed a numerical study of optical whispering gallery modes in microdisk resonators modified via their embedding in a homogeneous dielectric surrounding or covering with a thin dielectric layer. Mode spectra and electromagnetic field distributions were calculated through the solution of the Helmholtz equation using COMSOL Multiphysics environment. It is shown that the modification results ...
Added: December 9, 2020
Зубов Ф. И., Максимов М. В., Moiseev E. et al., Optics Letters 2021 Vol. 46 No. 16 P. 3853-3856
We study the impact of improved heat removal on the performance
of InGaAs/GaAs microdisk lasers epi-side down
bonded onto a silicon substrate. Unlike the initial characteristics
of microlasers on a GaAs substrate, the former’s
bonding results in a decrease in thermal resistance by a factor
of 2.3 (1.8) in microdisks with a diameter of 19 (31) m,
attributed to a thinner ...
Added: August 30, 2021
Расходчиков А. В., Щербак С. А., Kryzhanovskaya N. et al., Journal of Physics: Conference Series 2020
We performed a numerical study of a surrounding medium influence on coupling efficiency between a microdisk resonator supporting optical whispering gallery modes and a straight optical waveguide. Quality factors of the modes and relative optical power coupled to the waveguide were calculated using COMSOL Multiphysics environment. It was shown that the most efficient coupling takes ...
Added: December 7, 2020
Kryzhanovskaya N., Zhukov A., Moiseev E. et al., Journal of Physics D: Applied Physics 2021 Vol. 54 Article 453001
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for
creating compact, energy-efficient light sources (microlasers) for various applications owing to
their small footprints, high Q factors, planar geometry, in-plane light emission, and high
sensitivity to the environment. In this review we present the most recent advances in III–V
microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators
and discuss ...
Added: September 3, 2021
Makhov I., Ivanov K., Moiseev E. et al., Nanomaterials 2023 Vol. 13 No. 5 Article 877
One-state and two-state lasing is investigated experimentally and through numerical simulation
as a function of temperature in microdisk lasers with Stranski–Krastanow InAs/InGaAs/GaAs
quantum dots. Near room temperature, the temperature-induced increment of the ground-state
threshold current density is relatively weak and can be described by a characteristic temperature
of about 150 K. At elevated temperatures, a faster (super-exponential) increase in ...
Added: April 25, 2023
Verbus V. A., Сергеев С. М., Степихова М. В. et al., Наноматериалы и наноструктуры 2014 № 4 С. 43-46
This paper presents the results of micro-photoluminescence studies carried out for disk cavities formed on the basis of light-emitting SOI/n(Ge QDs-Si) structures. The results of theoretical simulations carried out for the microcavities under development together with the quality factors determined for these structures are presented. The quality factors of SOI/n(Ge QDs-Si) disk microcavities with diameters ...
Added: March 8, 2016
Zubov F., Maximov M., Kryzhanovskaya N. et al., Optics Letters 2019 Vol. 44 No. 22 P. 5442-5445
We report on direct large signal modulation and the reliability studies of microdisk lasers based on InGaAs/GaAs quantum well-dots. A 23 μm in diameter microlaser exhibits an open eye diagram up to 12.5 Gbit/s and is capable of error-free 10 Gbit/s data transmission at 30°C without temperature stabilization. The ageing tests of a 31 μm ...
Added: September 30, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Optics Express 2017 Vol. 25 No. 14 P. 16754-16760
In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under ...
Added: September 29, 2020
Zhukov A., Moiseev E., Nadtochiy A. et al., Laser Physics Letters 2022 Vol. 19 No. 2 Article 025801
The small-signal amplitude modulation, threshold, and spectral characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots active region were studied jointly with the spectral and threshold parameters of edge-emitting lasers made from the same epitaxial heterostructure. Using the obtained material parameters, the relative intensity noise of the microdisk lasers was calculated as a function of the ...
Added: February 28, 2022
Makhov I., Ivanov K., Moiseev E. et al., Photonics 2023 Vol. 10 No. 3 Article 235
The two-state lasing phenomenon, which manifests itself in simultaneous laser emission
through several optical transitions of quantum dots, is studied in microdisk diode lasers with
different cavity diameters. The active region represents a multiply stacked array of self-organized
InAs/InGaAs/GaAs quantum dots emitting in the wavelength range of 1.1–1.3 um. Two-state
lasing, which involves the ground-state and the first excited-state ...
Added: April 25, 2023
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Journal of Applied Physics 2016 Vol. 120 No. 33 P. 233103
We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a ...
Added: October 1, 2020
Kryzhanovskaya N., Moiseev E., Зубов Ф. И. et al., Journal of Applied Physics 2019 Vol. 126 No. 6 P. 063107
The energy-to-data ratio (EDR) was evaluated for quantum-dot based microdisk laser directly modulated without external cooling. The experimental values of EDR decrease with decreasing diameter of the microdisk and reach 1.5 pJ/bit for the smallest diameter under study (10.5 μm). In larger microdisks (with a diameter greater than 20 μm), the EDR varies in proportion to the square ...
Added: December 8, 2020
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Materials 2020 Vol. 13 No. 10 Article 2315
An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated ...
Added: May 25, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Optics Letters 2017 Vol. 42 No. 17 P. 3319-3322
High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of 600 A/cm2600 A/cm2 (room temperature, CW regime, heatsink-free uncooled operation) is comparable to that of high-quality ...
Added: September 29, 2020
Kryzhanovskaya N., Moiseev E., Зубов Ф. И. et al., Photonics Research 2019 Vol. 7 No. 6 P. 664-668
GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the ...
Added: December 9, 2020
Zhukov A., Moiseev E., Nadtochiy A. et al., IEEE Journal of Quantum Electronics 2023 Vol. 59 No. 1 Article 2000108
We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active
region. In particular, we study the effect of microlaser diameter D variation from 15 to 200 μm on optical losses of different nature. A strong dependence of the lasing wavelength on the diameter is observed: ...
Added: January 26, 2023
Kryzhanovskaya N., Zubov Fedor I., Moiseev E. et al., Laser Physics Letters 2022 Vol. 19 No. 1 Article 016201
Characteristics of a compact III–V optocoupler heterogeneously integrated on a silicon substrate
and formed by a 31 μm in diameter microdisk (MD) laser with a closely-spaced
50 μm × 200 μm waveguide photodetector are presented. Both optoelectronic devices were
fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers.
The measured dark current density of the photodetector was as ...
Added: December 2, 2021
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2020 Т. 46 № 16 С. 3-6
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, ...
Added: August 25, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Laser Physics Letters 2018 Vol. 15 No. 1 P. 015802
The combination of high operation temperatures and small diode lasers directly grown on silicon substrates is essential for their application in future photonic integrated circuits. In this letter, results are presented for quantum dot III–V-on-Si microdisk diode lasers tested at elevated temperatures. To the best of our knowledge, we have demonstrated the first uncooled microlasers ...
Added: September 29, 2020
Kryzhanovskaya N., Maximov M., Zhukov A. et al., Journal of Lightwave Technology 2015 Vol. 33 No. 1 P. 171-175
A dense array of InGaAs quantum dots formed by MOCVD on a misoriented GaAs substrate has been used as an active medium of microdisk resonators of various types: a cylindrical disk, an undercut disk, and a suspended disk. Single-mode room temperature lasing in a 9-μm microdisk laser is demonstrated with a dominant line around 1.13 ...
Added: September 30, 2020
Kryzhanovskaya N., Zhukov A., Maximov M. et al., IEEE Journal on Selected Topics in Quantum Electronics 2015 Vol. 21 No. 6 P. 709-713
Lasing characteristics of InAs/InGaAs quantum dot microdisks with diameter varied from 1 to 6 μm were studied under optical pumping. The disks were fabricated with standard photolithography and two-step wet etching. We demonstrate room temperature lasing in the 1.29-1.32-μm wavelength range (ground-state transition) in microlasers as small as 1 μm in diameter. The microlasers demonstrate ...
Added: September 30, 2020
Moiseev E., Kryzhanovskaya N., Zhukov A. et al., Optics Letters 2018 Vol. 43 No. 19 P. 4554-4557
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18 mW, a differential ...
Added: September 27, 2020
Antipov A., Seleznev V., Vakhtomin Y. et al., IOP Conference Series: Materials Science and Engineering (MSE) 2020 Vol. 781 No. 1 P. 012011-1-012011-5
Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 µm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures ...
Added: December 10, 2020